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Infineon Technologies IRF7389TRPBF

MOSFET N/P-CH 30V 8-SOIC
part number has RoHS
Manufacturer # :IRF7389TRPBF
Manufacturer :Infineon Technologies
Dasenic # :EC853A-DS
Customer # :
Description : MOSFET N/P-CH 30V 8-SOIC 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Cut Tape (CT) Dasenic-Reel®
Pricing (USD) : *To apply for a price, please click the Send Target Price button
QuantityUnit PriceTotal
10+$ 0.576200$ 5.76
4000+$ 0.320100$ 1280.4
8000+$ 0.301900$ 2415.2
12000+$ 0.283600$ 3403.2
16000+$ 0.256100$ 4097.6
In Stock: 19200
MOQ :1 PCS
Packaging :8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Cut Tape (CT) Dasenic-Reel®
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.5762
Total :$ 0.58
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IRF7389TRPBF information

Product Details
The IRF7389TRPBF is a N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) designed primarily for high-efficiency switching applications. It belongs to the discrete semiconductor devices category and is often used in various power management roles due to its excellent performance characteristics in terms of voltage, current, and thermal management. Functions 1. Switching Device: Used for switching applications in power circuits. 2. Signal Amplification: Can amplify electronic signals in certain configurations. 3. Voltage Regulation: Implements technologies for regulating voltage levels in power supplies. 4. High-Speed Operation: Suitable for applications requiring fast switching times. Applications - Power Supply Converters: Used in DC-DC converters and power management circuits. - Motor Control: Controls electric motors in applications like automotive and industrial. - Consumer Electronics: Applied in devices such as laptops, tablets, and gaming systems for power management. - LED Drivers: Powers LED modules in lighting applications. - Telecommunication Equipment: Drives RF amplifiers and other communication components. Alternative Parts When looking for alternatives to the IRF7389TRPBF, consider the following parts based on comparable specifications (voltage, current rating, and Rds(on)): - IRF740: An alternative N-channel MOSFET with similar functions. - IRF3205: A high-current MOSFET suitable for applications requiring higher power handling. - STP55NF06L: A low on-resistance MOSFET that can also be a functional replacement in certain applications. Embedded Modules - Power MOSFET Modules: Various modules include the IRF7389TRPBF for power applications, often present in power management boards or development kits. - Evaluation Boards: Boards that let engineers test and evaluate the performance of the IRF7389TRPBF in practical applications. Related Q&A 1. Q: What is the maximum drain-source voltage (Vds) for the IRF7389TRPBF? A: The maximum drain-source voltage (Vds) for the IRF7389TRPBF is typically rated at 40V. 2. Q: In which applications is the IRF7389TRPBF most commonly used? A: The IRF7389TRPBF is commonly used in power supply converters, motor control, consumer electronics, LED drivers, and telecommunication equipment. 3. Q: What are the key advantages of using N-channel MOSFETs like the IRF7389TRPBF? A: N-channel MOSFETs like the IRF7389TRPBF generally offer better conductivity, lower on-resistance (Rds(on)), and higher efficiency compared to P-channel MOSFETs, making them suitable for high-speed and high-power applications. 4. Q: Can you suggest alternative MOSFETs to replace the IRF7389TRPBF? A: Alternative MOSFETs include the IRF740, IRF3205, and STP55NF06L, which have similar electrical characteristics and can be used in comparable applications. 5. Q: How can the IRF7389TRPBF be utilized in a DC-DC converter circuit? A: The IRF7389TRPBF can be used as a switching element in a buck or boost converter topology, managing the on-off states to regulate output voltage while ensuring high efficiency in power conversion.
  • Infineon Technologies IRF7389TRPBF technical specifications, attributes, parameters.
  • Category:Discrete Semiconductor Devices/FETs, MOSFETs
  • Product Status:Active
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Technology:MOSFET (Metal Oxide)
  • Power - Max:2.5W
  • Supplier Device Package:8-SO
  • Configuration:N and P-Channel
  • F E T Feature:Logic Level Gate
  • Drain to Source Voltage ( Vdss):30V
  • Rds On ( Max) @ Id, Vgs:29mOhm @ 5.8A, 10V
  • Vgs(th) ( Max) @ Id:1V @ 250µA
  • Gate Charge ( Qg) ( Max) @ Vgs:33nC @ 10V
  • Input Capacitance ( Ciss) ( Max) @ Vds:650pF @ 25V
  • Series:HEXFET®
  • Base Product Number:IRF738
  • Packaging:Dasenic-Reel®
  • Packaging:Cut Tape (CT)
  • Packaging:Tape & Reel (TR)
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