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International Rectifier(IR) IRF1310NSTRLPBF
MOSFET N-CH 100V 42A D2PAK
Manufacturer # :IRF1310NSTRLPBF
Manufacturer :International Rectifier(IR)
Dasenic # :B0A5D3-DS
Datasheet :
IRF1310NSTRLPBF Datasheet
IRF1310NSTRLPBF DatasheetCustomer # :
Description : MOSFET N-CH 100V 42A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Tape & Reel (TR) Cut Tape (CT) Dasenic-Reel®
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| Quantity | Unit Price | Total |
| 1+ | $ 1.422000 | $ 1.42 |
| 25+ | $ 1.215000 | $ 30.38 |
| 100+ | $ 0.936000 | $ 93.6 |
| 500+ | $ 0.808200 | $ 404.1 |
| 1000+ | $ 0.574200 | $ 574.2 |
In Stock: 35520
MOQ :1 PCS
Packaging :TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Tape & Reel (TR) Cut Tape (CT) Dasenic-Reel®
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.422
Total :$ 1.42
Delivery :
Payment :
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IRF1310NSTRLPBF information
Product Details
The IRF1310NSTRLPBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by International Rectifier. It is designed for high power applications and offers low ON resistance and fast switching capabilities.
Functions:
1. Switching Functionality: The IRF1310NSTRLPBF can control the flow of electric current in a circuit by providing a conducting path when a certain voltage is applied to the gate terminal.
2. Voltage Regulation: It can be used to regulate and control voltage levels in power electronics applications.
3. Power Amplification: The MOSFET can amplify power signals in audio amplifiers, motor control circuits, and other electronic devices.
Applications:
1. Power Supplies: Used in switch-mode power supplies for efficient power conversion.
2. Motor Control: Ideal for motor drive applications due to its fast switching speeds and low ON resistance.
3. Inverters and Converters: Widely used in DC-DC converters, inverters, and power factor correction circuits.
4. Battery Management: Helps regulate charging and discharging processes in battery management systems.
Alternative Parts:
1. Infineon IRLR2905PBF: Comparable N-channel MOSFET with similar voltage and current ratings.
2. STMicroelectronics STP55NF06L: A viable alternative offering high power dissipation and low ON resistance.
3. Vishay Siliconix SiHP21N60E: Another N-channel MOSFET suitable for high-power applications.
Embedded Modules:
While specific embedded modules are not usually associated with discrete MOSFETs like the IRF1310NSTRLPBF, this component can often be integrated into power management modules, motor control modules, and DC-DC converter modules in various applications.
Related Q&A:
1. Q: What is the maximum drain current rating of the IRF1310NSTRLPBF MOSFET?
- A: The IRF1310NSTRLPBF has a maximum drain current rating of [specific value] Amperes, making it suitable for high-power applications.
2. Q: How does the ON resistance of the IRF1310NSTRLPBF affect its performance in power electronics?
- A: The low ON resistance of the IRF1310NSTRLPBF results in reduced power losses and improved efficiency in switching applications.
3. Q: Can the IRF1310NSTRLPBF be used in automotive applications?
- A: Yes, the IRF1310NSTRLPBF is designed to withstand high temperatures and voltages, making it suitable for automotive applications such as in automotive power systems and motor control.
4. Q: What are some common failure modes associated with the IRF1310NSTRLPBF MOSFET?
- A: Common failure modes include overcurrent conditions leading to thermal runaway, gate oxide damage due to overvoltage spikes, and potential ESD (Electrostatic Discharge) damage during handling and operation.
International Rectifier(IR) IRF1310NSTRLPBF technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Single MOSFETs
- Product Status:Active
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:D2PAK
- Power Dissipation ( Max):3.8W (Ta), 160W (Tc)
- F E T Type:N-Channel
- Drain to Source Voltage ( Vdss):100 V
- Current - Continuous Drain ( Id) @ 25° C:42A (Tc)
- Rds On ( Max) @ Id, Vgs:36mOhm @ 22A, 10V
- Vgs(th) ( Max) @ Id:4V @ 250µA
- Gate Charge ( Qg) ( Max) @ Vgs:110 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:1900 pF @ 25 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±20V
- Series:HEXFET®
- Base Product Number:IRF1310
- Packaging:Dasenic-Reel®
- Packaging:Cut Tape (CT)
- Packaging:Tape & Reel (TR)
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