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Infineon Technologies IR2125PBF

High Side 1.6A 0V~18V 3.3A PDIP-8 Gate Drive ICs
part number has RoHS
Manufacturer # :IR2125PBF
Manufacturer :Infineon Technologies
Dasenic # :0B64FB-DS
Customer # :
Description : High Side 1.6A 0V~18V 3.3A PDIP-8 Gate Drive ICs PDIP-8
Pricing (USD) : *To apply for a price, please click the Send Target Price button
QuantityUnit PriceTotal
1+$ 3.447000$ 3.45
10+$ 2.997000$ 29.97
100+$ 2.538000$ 253.8
250+$ 2.349000$ 587.25
500+$ 2.133000$ 1066.5
In Stock: 13200
MOQ :1 PCS
Packaging :PDIP-8
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 3.447
Total :$ 3.45
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IR2125PBF information

Product Details
The Infineon IR2125PBF is a high-voltage, high-speed power MOSFET driver that's primarily used to drive N-channel MOSFETs and IGBTs. It is designed for driving the upper and lower switching transistors in half-bridge or full-bridge configurations, making it suitable for applications such as motor drives and power converters. Functions - High-side and Low-side Driver: The IR2125PBF features dedicated outputs for driving both high-side and low-side MOSFETs/IGBTs in half-bridge configurations. - Bootstrap Circuit: It includes a built-in bootstrap circuit to allow for the high-side driving capability. - Undervoltage Lockout (UVLO): Protects the driver from low supply voltages. - Deadtime Control: Includes provision for deadtime management to prevent shoot-through during switching. - High and Low Side Outputs: Drives MOSFETs/IGBTs at a voltage of up to 600V. Applications - Motor Control: Used in various motor control applications such as brushless DC motor drives and stepper motor drives. - Switch Mode Power Supplies (SMPS): Suitable for use in inverters and converters. - Industrial Drives: Found in applications requiring high-performance power control. - Renewable Energy: Applicable in solar inverters and wind power generation. Alternative Parts 1. IR2110: Similar functionality but with different performance characteristics. 2. IRF740: An alternative driver MOSFET option for specific applications with lower voltage requirements. 3. LM5109: A high-speed driver for driving high-power MOSFETs. 4. MIC4211: Offers similar functionality but in a different package. Embedded Modules While the IR2125PBF itself is not an embedded module, it can be integrated into various power control modules and embedded system designs. Boards like: - Motor Driver Modules - Integrated Power Control Boards - DC-DC Converters Q&A 1. Q: What is the maximum operating voltage for the IR2125PBF? A: The IR2125PBF can operate with a maximum voltage of up to 600V. 2. Q: Does the IR2125PBF have built-in protections? A: Yes, it includes features such as undervoltage lockout (UVLO) to protect the driver from operating under unsafe voltage conditions. 3. Q: What types of transistors can the IR2125PBF drive? A: The IR2125PBF is designed to drive N-channel MOSFETs and IGBTs. 4. Q: How does the IR2125PBF manage deadtime in switching applications? A: It incorporates deadtime control features to prevent shoot-through during the transition between high-side and low-side drivers. 5. Q: Can the IR2125PBF be used for motor control applications? A: Yes, it is commonly used in motor control applications like driving brushless DC motors and inverters.
  • Infineon Technologies IR2125PBF technical specifications, attributes, parameters.
  • Category:Integrated Circuits (ICs)/Gate Drivers for Power MOSFETs and IGBTs
  • Product Status:Active
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:8-DIP (0.300", 7.62mm)
  • Input Type:Non-Inverting
  • Supplier Device Package:8-PDIP
  • Voltage - Supply:0V ~ 18V
  • Channel Type:Single
  • Driven Configuration:High-Side
  • Number of Drivers:1
  • Gate Type:IGBT, N-Channel MOSFET
  • Logic Voltage - V I L, V I H:0.8V, 2.2V
  • Current - Peak Output ( Source, Sink):1.6A, 3.3A
  • High Side Voltage - Max ( Bootstrap):500 V
  • Rise / Fall Time ( Typ):43ns, 26ns
  • Base Product Number:IR2125
  • Packaging:Tube
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