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Infineon Technologies IR2111PBF

DIP-8 Gate Drive ICs
part number has RoHS
Manufacturer # :IR2111PBF
Manufacturer :Infineon Technologies
Dasenic # :110F61-DS
Customer # :
Description : DIP-8 Gate Drive ICs DIP-8
Pricing (USD) : *To apply for a price, please click the Send Target Price button
QuantityUnit PriceTotal
7+$ 1.174600$ 8.22
10+$ 1.133700$ 11.34
100+$ 1.095600$ 109.56
250+$ 1.080700$ 270.18
500+$ 1.049300$ 524.65
In Stock: 34332
MOQ :1 PCS
Packaging :DIP-8
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1.1746
Total :$ 1.17
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IR2111PBF information

Product Details
- Manufacturer: Infineon Technologies - Product Category: Integrated Circuits (ICs) - Type: Power MOSFET & IGBT Driver - Part Number: IR2111PBF 2. Functions: - Provides electrically isolated high and low side drive outputs - Drives both the high-side and low-side power devices in a half-bridge or full-bridge configuration - Supports bootstrap operation to enable high-side gate drive using a single power supply 3. Applications: - Motor control applications (e.g., motor drives, inverters) - Switching power supplies and UPS systems - Active clamp circuits and resonant converters - Bridge, half-bridge, and full-bridge configurations 4. Alternative Parts: - IR2110: Similar to IR2111, but without under-voltage lockout (UVLO) protection - IR2113: Dual high and low side driver specifically designed for single-ended bipolar stepper motor control 5. Embedded Modules: - Many vendors offer power electronic modules that incorporate the IR2111PBF for superior motor control and power conversion performance - These modules may include additional components such as MOSFETs, gate drive circuits, and protection features Here are a few relevant Q&A related to the IR2111PBF: 1. Q: What is the maximum supply voltage rating for IR2111PBF? A: The maximum supply voltage rating is typically 20V. It should not exceed the absolute maximum rating of 25V. 2. Q: Can I use the IR2111PBF with different types of power devices like MOSFETs and IGBTs? A: Yes, IR2111PBF can drive both power MOSFETs and IGBTs effectively. It is designed to be compatible with a wide range of power devices. 3. Q: What is the purpose of the bootstrap circuit in IR2111PBF? A: The bootstrap circuit allows the high-side gate driver to operate with a single power supply. It generates a voltage higher than the supply voltage to efficiently drive the high-side power device. 4. Q: Does IR2111PBF have any built-in protection features? A: Yes, IR2111PBF includes under-voltage lockout (UVLO) protection to prevent malfunctioning when the supply voltage is too low. 5. Q: Can I parallel multiple IR2111PBF devices to drive larger power modules? A: Yes, IR2111PBF can be parallelized to drive higher power modules. Proper gate resistor matching and layout considerations are crucial for effective parallel operation. Please note that specific technical details and any additional questions should be referred to the manufacturer's datasheet and guidelines.
  • Infineon Technologies IR2111PBF technical specifications, attributes, parameters.
  • Category:Integrated Circuits (ICs)/Gate Drivers for Power MOSFETs and IGBTs
  • Product Status:Not For New Designs
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:8-DIP (0.300", 7.62mm)
  • Input Type:Non-Inverting
  • Supplier Device Package:8-PDIP
  • Voltage - Supply:10V ~ 20V
  • Channel Type:Synchronous
  • Driven Configuration:Half-Bridge
  • Number of Drivers:2
  • Gate Type:IGBT, N-Channel MOSFET
  • Logic Voltage - V I L, V I H:8.3V, 12.6V
  • Current - Peak Output ( Source, Sink):250mA, 500mA
  • High Side Voltage - Max ( Bootstrap):600 V
  • Rise / Fall Time ( Typ):80ns, 40ns
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