Infineon Technologies IPP410N30NAKSA1 technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
Product Status:Active
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PG-TO220-3
Power Dissipation ( Max):300W (Tc)
F E T Type:N-Channel
F E T Feature:-
Drain to Source Voltage ( Vdss):300 V
Current - Continuous Drain ( Id) @ 25° C:44A (Tc)
Rds On ( Max) @ Id, Vgs:41mOhm @ 44A, 10V
Vgs(th) ( Max) @ Id:4V @ 270µA
Gate Charge ( Qg) ( Max) @ Vgs:87 nC @ 10 V
Input Capacitance ( Ciss) ( Max) @ Vds:7180 pF @ 100 V
Drive Voltage ( Max Rds On, Min Rds On):10V
Vgs ( Max):±20V
EU RoHS Status:ROHS3 Compliant
MSL Rating:1 (Unlimited, 30°C/85%RH)
REACH Status:REACH Unaffected
US ECCN:EAR99
HTS US:8541.29.0095
China RoHS Status:Green Symbol: Green and environmentally friendly product
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- The defect must be reported within 365 days after delivery.
- The product must be unused and in its original, unopened packaging.
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IPP410N30NAKSA1 Datasheet
