Infineon Technologies IPG20N10S4L22AATMA1 technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Arrays
Product Status:Active
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Package / Case:8-PowerVDFN
Power - Max:60W
Supplier Device Package:PG-TDSON-8-10
F E T Type:2 N-Channel (Dual)
F E T Feature:Logic Level Gate
Drain to Source Voltage ( Vdss):100V
Current - Continuous Drain ( Id) @ 25° C:20A
Rds On ( Max) @ Id, Vgs:22mOhm @ 17A, 10V
Vgs(th) ( Max) @ Id:2.1V @ 25µA
Gate Charge ( Qg) ( Max) @ Vgs:27nC @ 10V
Input Capacitance ( Ciss) ( Max) @ Vds:1755pF @ 25V
EU RoHS Status:ROHS3 Compliant
MSL Rating:1 (Unlimited, 30°C/85%RH)
REACH Status:REACH Unaffected
US ECCN:EAR99
HTS US:8541.29.0095
China RoHS Status:Green Symbol: Green and environmentally friendly product
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IPG20N10S4L22AATMA1 Datasheet
