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Infineon Technologies IPD65R600C6BTMA1
MOSFET N-CH 650V 7.3A TO252-3
Manufacturer # :IPD65R600C6BTMA1
Manufacturer :Infineon Technologies
Dasenic # :IPD65R600C6BTMA1-DS
Datasheet :
IPD65R600C6BTMA1 Datasheet
IPD65R600C6BTMA1 DatasheetCustomer # :
Description : MOSFET N-CH 650V 7.3A TO252-3
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.5362 | $ 0.54 |
| 25+ | $ 0.5255 | $ 13.14 |
| 100+ | $ 0.5041 | $ 50.41 |
| 500+ | $ 0.4826 | $ 241.3 |
| 1000+ | $ 0.4558 | $ 455.8 |
In Stock: 18575
MOQ :1 PCS
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Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 0.5362
Total :$ 0.54
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IPD65R600C6BTMA1 information
Infineon Technologies IPD65R600C6BTMA1 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Obsolete
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PG-TO252-3
- Power Dissipation ( Max):63W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):650 V
- Current - Continuous Drain ( Id) @ 25° C:7.3A (Tc)
- Rds On ( Max) @ Id, Vgs:600mOhm @ 2.1A, 10V
- Vgs(th) ( Max) @ Id:3.5V @ 210µA
- Gate Charge ( Qg) ( Max) @ Vgs:23 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:440 pF @ 100 V
- Drive Voltage ( Max Rds On, Min Rds On):10V
- Vgs ( Max):±20V
- EU RoHS Status:RoHS Compliant
- REACH Status:Vendor is not defined
- US ECCN:Provided as per user requirements
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
IPD65R600C6BTMA1 provided by Infineon Technologies
Infineon Technologies AG (OTCMKTS: IFNNY) is a global semiconductor leader in power systems and IoT.
Infineon drives decarbonization and digitalization with its products and solutions. The company's semiconductor products include ASIC, Battery Management ICs, Clocks & Timing Solutions, ESD and Surge Protection, Memories Microcontroller, RF, Security & smart card solutions, Sensor, Small Signal Transistors & Diodes, Transceivers, Wireless Connectivity, Software, and more. These products are used in automotive, green industrial power, power management, sensing solutions, and security in IoT applications.
Infineon Technologies was founded in 1999 as a spin-off from Siemens AG. The company is headquartered in Neubiberg, near Munich, Germany, and boasts approximately 56,200 employees and 155 locations worldwide.
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