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Infineon Technologies IPD50R1K4CEBTMA1
MOSFET N-CH 500V 3.1A TO252-3
Manufacturer # :IPD50R1K4CEBTMA1
Manufacturer :Infineon Technologies
Dasenic # :791189-DS
Datasheet :
IPD50R1K4CEBTMA1 Datasheet
IPD50R1K4CEBTMA1 DatasheetSample :
Customer # :
Description : MOSFET N-CH 500V 3.1A TO252-3 TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Cut Tape (CT) Dasenic-Reel®
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 0.131200 | $ 0.13 |
| 25+ | $ 0.128600 | $ 3.22 |
| 100+ | $ 0.123400 | $ 12.34 |
| 500+ | $ 0.118100 | $ 59.05 |
| 1000+ | $ 0.111500 | $ 111.5 |
In Stock: 3444
MOQ :1 PCS
Packaging :TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Cut Tape (CT) Dasenic-Reel®
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 0.1312
Total :$ 0.13
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- Category:Discrete Semiconductor Devices/Single MOSFETs
- Product Status:Obsolete
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PG-TO252-3
- Power Dissipation ( Max):25W (Tc)
- F E T Type:N-Channel
- Drain to Source Voltage ( Vdss):500 V
- Current - Continuous Drain ( Id) @ 25° C:3.1A (Tc)
- Rds On ( Max) @ Id, Vgs:1.4Ohm @ 900mA, 13V
- Vgs(th) ( Max) @ Id:3.5V @ 70µA
- Gate Charge ( Qg) ( Max) @ Vgs:1 nC @ 10 V
- Input Capacitance ( Ciss) ( Max) @ Vds:178 pF @ 100 V
- Drive Voltage ( Max Rds On, Min Rds On):13V
- Vgs ( Max):±20V
- Series:CoolMOS™ CE
- Base Product Number:IPD50R
- Packaging:Dasenic-Reel®
- Packaging:Cut Tape (CT)
- Packaging:Tape & Reel (TR)
