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Infineon Technologies IPD350N06LGBUMA1
MOSFET N-CH 60V 29A TO252-3
Manufacturer # :IPD350N06LGBUMA1
Manufacturer :Infineon Technologies
Dasenic # :973BDC-DS
Datasheet :
IPD350N06LGBUMA1 Datasheet
IPD350N06LGBUMA1 DatasheetSample :
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Description : MOSFET N-CH 60V 29A TO252-3 TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR)
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| Quantity | Unit Price | Total |
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In Stock: 46
MOQ :1 PCS
Packaging :TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR)
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
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Unit Price : $ 0
Total :$ 0.00
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- Category:Discrete Semiconductor Devices/Single MOSFETs
- Product Status:Obsolete
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:PG-TO252-3
- Power Dissipation ( Max):68W (Tc)
- F E T Type:N-Channel
- Drain to Source Voltage ( Vdss):60 V
- Current - Continuous Drain ( Id) @ 25° C:29A (Tc)
- Rds On ( Max) @ Id, Vgs:35mOhm @ 29A, 10V
- Vgs(th) ( Max) @ Id:2V @ 28µA
- Gate Charge ( Qg) ( Max) @ Vgs:13 nC @ 5 V
- Input Capacitance ( Ciss) ( Max) @ Vds:800 pF @ 30 V
- Drive Voltage ( Max Rds On, Min Rds On):4.5V, 10V
- Vgs ( Max):±20V
- Series:OptiMOS™
- Base Product Number:IPD350N
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