Name: IPB010N06NATMA1
Brand: Infineon Technologies
SKU: DS-6131772
Price: 3.609 USD
Availability: InStock
Rating: 4.8 (3 reviews)

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Infineon Technologies IPB010N06NATMA1

MOSFET N-CH 60V 45A/180A TO263-7

Manufacturer # :IPB010N06NATMA1

Manufacturer :Infineon Technologies

Dasenic # :IPB010N06NATMA1-DS

Datasheet :

IPB010N06NATMA1 Datasheet

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Description : MOSFET N-CH 60V 45A/180A TO263-7

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Quantity	Unit Price	Total
1+	$ 3.6090	$ 3.61
10+	$ 3.4560	$ 34.56
50+	$ 3.3660	$ 168.3
500+	$ 3.3570	$ 1678.5
1000+	$ 3.0870	$ 3087

In Stock: 46800

MOQ :1 PCS

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Delivery Time :Ship Within 48 Hours

Shipping Origin :Shenzhen or Hong Kong Warehouse

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Unit Price :$ 3.609

Total :$ 3.61

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IPB010N06NATMA1 information

Infineon Technologies IPB010N06NATMA1 technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
Product Status:Active
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-263-7, D²Pak (6 Leads + Tab)
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PG-TO263-7
Power Dissipation ( Max):300W (Tc)
F E T Type:N-Channel
F E T Feature:-
Drain to Source Voltage ( Vdss):60 V
Current - Continuous Drain ( Id) @ 25° C:45A (Ta), 180A (Tc)
Rds On ( Max) @ Id, Vgs:1mOhm @ 100A, 10V
Vgs(th) ( Max) @ Id:4V @ 280µA
Gate Charge ( Qg) ( Max) @ Vgs:208 nC @ 10 V
Input Capacitance ( Ciss) ( Max) @ Vds:15000 pF @ 30 V
Drive Voltage ( Max Rds On, Min Rds On):6V, 10V
Vgs ( Max):±20V
EU RoHS Status:ROHS3 Compliant
MSL Rating:1 (Unlimited, 30°C/85%RH)
REACH Status:REACH Unaffected
US ECCN:EAR99
HTS US:8541.29.0095
China RoHS Status:Green Symbol: Green and environmentally friendly product

Download datasheets and manufacturer documentation for Infineon Technologies IPB010N06NATMA1
Datasheet:
IPB010N06NATMA1,

Infineon Technologies IPB010N06NATMA1 Environmental and export classification status description
The Infineon Technologies IPB010N06NATMA1 is a discrete semiconductor device in the category of power MOSFETs. It is designed for various high power applications and offers low on-state resistance and efficient switching performance. Functions: The IPB010N06NATMA1 functions as a power switch, allowing the control and regulation of high power electrical signals. It is particularly optimized for use in applications that require high current handling and low power dissipation. Applications: This power MOSFET finds applications in a variety of fields, including but not limited to: 1. Industrial automation and control systems 2. Motor drives and robotics 3. Renewable energy systems (solar inverters, wind turbines) 4. Power supplies and DC-DC converters 5. Automotive systems (including electric vehicles) Alternative Parts: Some alternative parts to the IPB010N06NATMA1 in the same category of discrete power MOSFETs could include: 1. STMicroelectronics STN6NF06L 2. ON Semiconductor FDPF7N60NZ 3. NXP Semiconductors PSMN3R4-40YLC,118 Embedded Modules: The IPB010N06NATMA1 can be used in combination with various embedded modules to enhance and simplify its integration into different electronic systems. Some embedded modules that are commonly paired with this MOSFET include gate driver ICs, heat sink modules, and protection circuits. Here are three related Q&A: 1. Q: What does the "N-channel" in the IPB010N06NATMA1 description mean? A: "N-channel" refers to the type of MOSFET, where the conducting channel is formed by majority charge carriers (electrons) in the n-type semiconductor material. 2. Q: Can the IPB010N06NATMA1 handle high voltage applications? A: Yes, this MOSFET is designed to handle high voltage applications, typically up to a maximum voltage of 60 volts. 3. Q: Is the IPB010N06NATMA1 suitable for switching applications? A: Indeed, this MOSFET is well-suited for switching applications due to its low on-state resistance and efficient switching performance, enabling faster and more efficient power control.

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IPB010N06NATMA1 provided by Infineon Technologies

Infineon Technologies AG (OTCMKTS: IFNNY) is a global semiconductor leader in power systems and IoT. Infineon drives decarbonization and digitalization with its products and solutions. The company's semiconductor products include ASIC, Battery Management ICs, Clocks & Timing Solutions, ESD and Surge Protection, Memories Microcontroller, RF, Security & smart card solutions, Sensor, Small Signal Transistors & Diodes, Transceivers, Wireless Connectivity, Software, and more. These products are used in automotive, green industrial power, power management, sensing solutions, and security in IoT applications. Infineon Technologies was founded in 1999 as a spin-off from Siemens AG. The company is headquartered in Neubiberg, near Munich, Germany, and boasts approximately 56,200 employees and 155 locations worldwide.