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Infineon Technologies FF650R17IE4DB2BOSA1
IGBT MODULE 1700V 4150W
Manufacturer # :FF650R17IE4DB2BOSA1
Manufacturer :Infineon Technologies
Dasenic # :A1E1C2-DS
Datasheet :
FF650R17IE4DB2BOSA1 Datasheet
FF650R17IE4DB2BOSA1 DatasheetSample :
Customer # :
Description : IGBT MODULE 1700V 4150W Module Tray
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 537.282000 | $ 537.28 |
| 25+ | $ 526.536000 | $ 13163.4 |
| 100+ | $ 505.044000 | $ 50504.4 |
| 500+ | $ 483.561000 | $ 241780.5 |
| 1000+ | $ 456.696000 | $ 456696 |
In Stock: 1980
MOQ :1 PCS
Packaging :Module Tray
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 537.282
Total :$ 537.28
Delivery : 
Payment :
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- Category:Discrete Semiconductor Devices/IGBT Modules
- Product Status:Active
- Operating Temperature:-40°C ~ 150°C
- Mounting Type:Chassis Mount
- Package / Case:Module
- Power - Max:4150 W
- Supplier Device Package:Module
- Configuration:2 Independent
- Input:Standard
- Voltage - Collector Emitter Breakdown ( Max):1700 V
- Current - Collector Cutoff ( Max):5 mA
- Vce(on) ( Max) @ Vge, Ic:2.45V @ 15V, 650A
- Input Capacitance ( Cies) @ Vce:54 nF @ 25 V
- N T C Thermistor:Yes
- Series:PrimePACK™2
- Base Product Number:FF650R17
- Packaging:Tray
