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1 : $298.5200
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Infineon Technologies FF200R12KE3B2HOSA1
IGBT MOD 1200V 295A 1050W![part number has RoHS](/img/RoHS2.png)
Manufacturer # :FF200R12KE3B2HOSA1
Manufacturer :Infineon Technologies
Dasenic # :455E63-DS
Datasheet :
FF200R12KE3B2HOSA1 Datasheet
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Description : IGBT MOD 1200V 295A 1050W Module Tray
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Quantity | Unit Price | Total |
1+ | $ 298.520000 | $ 298.52 |
10+ | $ 276.324000 | $ 2763.24 |
30+ | $ 266.240000 | $ 7987.2 |
In Stock: 1505
MOQ :1 PCS
Packaging :Module Tray
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 298.52
Total :$ 298.52
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- Category:Discrete Semiconductor Devices/IGBT Modules
- Product Status:Active
- Operating Temperature:-40°C ~ 125°C
- Mounting Type:Chassis Mount
- Power - Max:1050 W
- Supplier Device Package:Module
- Configuration:Half Bridge
- Input:Standard
- Current - Collector ( Ic) ( Max):295 A
- Voltage - Collector Emitter Breakdown ( Max):1200 V
- Current - Collector Cutoff ( Max):5 mA
- Vce(on) ( Max) @ Vge, Ic:2.15V @ 15V, 200A
- Input Capacitance ( Cies) @ Vce:14 nF @ 25 V
- N T C Thermistor:No
- Base Product Number:FF200R12