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Infineon Technologies BSM25GP120B2BOSA1
IGBT MODULE 1200V![part number has RoHS](/img/RoHS2.png)
Manufacturer # :BSM25GP120B2BOSA1
Manufacturer :Infineon Technologies
Dasenic # :DBAB39-DS
Datasheet :
BSM25GP120B2BOSA1 Datasheet
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Description : IGBT MODULE 1200V Module Tray
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In Stock: 40
MOQ :1 PCS
Packaging :Module Tray
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
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- Category:Discrete Semiconductor Devices/IGBT Modules
- Product Status:Obsolete
- Operating Temperature:150°C (TJ)
- Mounting Type:Chassis Mount
- Power - Max:230 W
- Supplier Device Package:Module
- Configuration:Full Bridge
- Input:Three Phase Bridge Rectifier
- Current - Collector ( Ic) ( Max):45 A
- Voltage - Collector Emitter Breakdown ( Max):1200 V
- Current - Collector Cutoff ( Max):500 µA
- Vce(on) ( Max) @ Vge, Ic:2.55V @ 15V, 25A
- Input Capacitance ( Cies) @ Vce:1.5 nF @ 25 V
- N T C Thermistor:Yes
- Base Product Number:BSM25G