Infineon Technologies BCM856SH6778XTSA1 technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Transistors - Bipolar (BJT) - Arrays
Product Status:Not For New Designs
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-VSSOP, SC-88, SOT-363
Power - Max:250mW
Supplier Device Package:PG-SOT363-PO
Transistor Type:2 PNP (Dual)
Current - Collector ( Ic) ( Max):100mA
Voltage - Collector Emitter Breakdown ( Max):65V
Vce Saturation ( Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff ( Max):15nA (ICBO)
D C Current Gain (h F E) ( Min) @ Ic, Vce:200 @ 2mA, 5V
Frequency - Transition:250MHz
EU RoHS Status:ROHS3 Compliant
MSL Rating:1 (Unlimited, 30°C/85%RH)
REACH Status:REACH Unaffected
US ECCN:EAR99
HTS US:8541.21.0075
China RoHS Status:Green Symbol: Green and environmentally friendly product
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- The defect must be reported within 365 days after delivery.
- The product must be unused and in its original, unopened packaging.
- Requesting Return Authorizations must be obtained.
For the return process:
- Please inform us within 365 days of receiving the product.
- Obtain Return Authorization from our team.
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BCM856SH6778XTSA1 Datasheet
