Name: BB555H7902XTSA1
Brand: Infineon Technologies
SKU: DS-5878326
Price: 0.0648 USD
Availability: InStock
Rating: 4.8 (3 reviews)

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Infineon Technologies BB555H7902XTSA1

DIODE VAR CAP 30V 20MA SCD80

Manufacturer # :BB555H7902XTSA1

Manufacturer :Infineon Technologies

Dasenic # :BB555H7902XTSA1-DS

Datasheet :

BB555H7902XTSA1 Datasheet

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Description : DIODE VAR CAP 30V 20MA SCD80

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Quantity	Unit Price	Total
10+	$ 0.0648	$ 0.65
6918+	$ 0.0360	$ 249.05

In Stock: 18417

MOQ :1 PCS

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Shipping Origin :Shenzhen or Hong Kong Warehouse

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Unit Price :$ 0.0648

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BB555H7902XTSA1 information

Infineon Technologies BB555H7902XTSA1 technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Diodes - Variable Capacitance (Varicaps, Varactors)
Product Status:Obsolete
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-80
Supplier Device Package:SCD-80
Diode Type:Single
Voltage - Peak Reverse ( Max):30 V
Capacitance @ Vr, F:2.3pF @ 28V, 1MHz
Capacitance Ratio:9.8
Capacitance Ratio Condition:C1/C28
Q @ Vr, F:-
MSL Rating:1 (Unlimited, 30°C/85%RH)
REACH Status:REACH Unaffected
US ECCN:EAR99
HTS US:8541.10.0070
EU RoHS Status:RoHS Compliant
China RoHS Status:Orange Symbol: Safe for use during the environmental protection period

Download datasheets and manufacturer documentation for Infineon Technologies BB555H7902XTSA1
Datasheet:
BB555H7902XTSA1,

Infineon Technologies BB555H7902XTSA1 Environmental and export classification status description
Infineon Technologies' BB555H7902XTSA1 is a discrete semiconductor device categorized as a High-Power RF Bipolar Silicon Transistor. It is commonly utilized in RF power amplifier applications due to its high power capabilities. Functions: - High-power RF amplification - Suitable for frequency range operations up to several GHz - Efficient power handling and thermal management Applications: - RF power amplifiers in broadcast transmitters - RF generators for industrial processes - High-power RF drivers and converters Alternative Components: - Fairchild Semiconductor HRF3205: An alternative high-power RF transistor suitable for similar applications. - NXP Semiconductors BLF488: Another option for high-power RF amplification with good performance characteristics. Embedded Modules: - While BB555H7902XTSA1 is a discrete component, it can be integrated into modules or RF amplifier circuits by manufacturers for specific applications. Related Q&A: 1. What are the key specifications of Infineon Technologies' BB555H7902XTSA1 in terms of power handling and frequency range? 2. How does the BB555H7902XTSA1 compare to similar high-power RF transistors in terms of efficiency and linearity? 3. What are the typical circuit configurations for utilizing the BB555H7902XTSA1 in RF power amplifier designs? 4. Can the BB555H7902XTSA1 be used in amateur radio RF amplifier projects, and what considerations should be made for such applications? 5. Are there any specific thermal management guidelines for ensuring optimal performance of the BB555H7902XTSA1 in high-power RF applications?

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BB555H7902XTSA1 provided by Infineon Technologies

Infineon Technologies AG (OTCMKTS: IFNNY) is a global semiconductor leader in power systems and IoT. Infineon drives decarbonization and digitalization with its products and solutions. The company's semiconductor products include ASIC, Battery Management ICs, Clocks & Timing Solutions, ESD and Surge Protection, Memories Microcontroller, RF, Security & smart card solutions, Sensor, Small Signal Transistors & Diodes, Transceivers, Wireless Connectivity, Software, and more. These products are used in automotive, green industrial power, power management, sensing solutions, and security in IoT applications. Infineon Technologies was founded in 1999 as a spin-off from Siemens AG. The company is headquartered in Neubiberg, near Munich, Germany, and boasts approximately 56,200 employees and 155 locations worldwide.