Name: BB 659 E7908
Brand: Infineon Technologies
SKU: DS-5887145
Price: 0.154 USD
Availability: InStock
Rating: 4.8 (3 reviews)

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1 : $0.1540

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Infineon Technologies BB 659 E7908

DIODE VAR CAP 30V 20MA SCD-80

Manufacturer # :BB 659 E7908

Manufacturer :Infineon Technologies

Dasenic # :BB 659 E7908-DS

Datasheet :

BB 659 E7908 Datasheet

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Description : DIODE VAR CAP 30V 20MA SCD-80

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Quantity	Unit Price	Total
1+	$ 0.1540	$ 0.15

In Stock: 10

MOQ :1 PCS

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Delivery Time :Ship Within 48 Hours

Shipping Origin :Shenzhen or Hong Kong Warehouse

Quantity :

Unit Price :$ 0.154

Total :$ 0.15

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BB 659 E7908 information

Infineon Technologies BB 659 E7908 technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Diodes - Variable Capacitance (Varicaps, Varactors)
Product Status:Obsolete
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-80
Supplier Device Package:SCD-80
Diode Type:Single
Voltage - Peak Reverse ( Max):30 V
Capacitance @ Vr, F:2.9pF @ 28V, 1MHz
Capacitance Ratio:14.7
Capacitance Ratio Condition:C1/C28
Q @ Vr, F:-
EU RoHS Status:RoHS Compliant
REACH Status:Vendor is not defined
US ECCN:Provided as per user requirements
China RoHS Status:Orange Symbol: Safe for use during the environmental protection period

Download datasheets and manufacturer documentation for Infineon Technologies BB 659 E7908
Datasheet:
BB 659 E7908,

Infineon Technologies BB 659 E7908 Environmental and export classification status description
The Infineon Technologies BB 659 E7908 is a high-frequency silicon NPN transistor designed for RF applications. It is part of the Discrete Semiconductor Devices category and is known for its high performance and reliability in various electronic circuits. Functions: - Amplification of high-frequency signals - Suitable for RF applications - Provides stability and efficiency in electronic circuits Applications: - Radio frequency communication systems - Wireless transmitters and receivers - Radar systems - Microwave circuits Alternative Components: - NXP Semiconductors BFU730F - ON Semiconductor NE461M04-T1 - Toshiba 2SC3358 Embedded Modules: - Not applicable, as the BB 659 E7908 is a discrete semiconductor device. Related Q&A: 1. What is the maximum frequency range for the Infineon Technologies BB 659 E7908? - The Infineon Technologies BB 659 E7908 operates effectively in the frequency range of 1 to 8 GHz. 2. Can the BB 659 E7908 be used in low-power RF applications? - Yes, the BB 659 E7908 is suitable for low-power RF applications due to its high-frequency capabilities. 3. What are the key advantages of using the Infineon Technologies BB 659 E7908 in radar systems? - The BB 659 E7908 offers high performance, stability, and reliability, making it ideal for radar applications where consistent signal amplification is crucial. 4. Are there any recommended heat dissipation techniques for the BB 659 E7908 in high-power RF circuits? - To manage heat effectively, it is advisable to use appropriate heat sinks or thermal management solutions to ensure the transistor's performance and longevity. 5. How does the Infineon Technologies BB 659 E7908 compare to other high-frequency transistors in terms of gain and noise figure? - The BB 659 E7908 typically offers competitive gain and noise figure characteristics compared to similar transistors from other manufacturers, making it a preferred choice in RF designs.

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BB 659 E7908 provided by Infineon Technologies

Infineon Technologies AG (OTCMKTS: IFNNY) is a global semiconductor leader in power systems and IoT. Infineon drives decarbonization and digitalization with its products and solutions. The company's semiconductor products include ASIC, Battery Management ICs, Clocks & Timing Solutions, ESD and Surge Protection, Memories Microcontroller, RF, Security & smart card solutions, Sensor, Small Signal Transistors & Diodes, Transceivers, Wireless Connectivity, Software, and more. These products are used in automotive, green industrial power, power management, sensing solutions, and security in IoT applications. Infineon Technologies was founded in 1999 as a spin-off from Siemens AG. The company is headquartered in Neubiberg, near Munich, Germany, and boasts approximately 56,200 employees and 155 locations worldwide.