Name: BAR81WH6327XTSA1
Brand: Infineon Technologies
SKU: DS-5746679
Price: 0.1719 USD
Availability: InStock
Rating: 4.8 (3 reviews)

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Infineon Technologies BAR81WH6327XTSA1

DIODE STANDAR 30V 100MW SOT343-4

Manufacturer # :BAR81WH6327XTSA1

Manufacturer :Infineon Technologies

Dasenic # :BAR81WH6327XTSA1-DS

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BAR81WH6327XTSA1 Datasheet

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Description : DIODE STANDAR 30V 100MW SOT343-4

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Quantity	Unit Price	Total
5+	$ 0.1719	$ 0.86
50+	$ 0.1710	$ 8.55
200+	$ 0.1701	$ 34.02
1000+	$ 0.1683	$ 168.3

In Stock: 22297

MOQ :1 PCS

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BAR81WH6327XTSA1 information

Infineon Technologies BAR81WH6327XTSA1 technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Diodes - RF
Product Status:Active
Operating Temperature:150°C (TJ)
Package / Case:SC-82A, SOT-343
Supplier Device Package:PG-SOT343-4-2
Current - Max:100 mA
Diode Type:Standard - Single
Voltage - Peak Reverse ( Max):30V
Capacitance @ Vr, F:0.9pF @ 3V, 1MHz
Resistance @ If, F:1Ohm @ 5mA, 100MHz
Power Dissipation ( Max):100 mW
EU RoHS Status:ROHS3 Compliant
MSL Rating:1 (Unlimited, 30°C/85%RH)
REACH Status:REACH Unaffected
US ECCN:EAR99
HTS US:8541.10.0070
China RoHS Status:Green Symbol: Green and environmentally friendly product

Download datasheets and manufacturer documentation for Infineon Technologies BAR81WH6327XTSA1
Datasheet:
BAR81WH6327XTSA1,

Infineon Technologies BAR81WH6327XTSA1 Environmental and export classification status description
The Infineon Technologies BAR81WH6327XTSA1 is a discrete Schottky diode designed for high-speed switching applications. It is commonly used in various electronic circuits that require fast response times and low forward voltage drop. Functions: 1. High-Speed Switching: The BAR81WH6327XTSA1 is optimized for fast switching applications, making it suitable for high-frequency circuits. 2. Low Forward Voltage Drop: This diode features a low forward voltage drop, leading to improved energy efficiency in electronic systems. Applications: 1. RF Transmission: The BAR81WH6327XTSA1 can be used in RF transmission circuits where high-speed switching is required for signal modulation and demodulation. 2. Power Supplies: It can be utilized in power supply circuits to improve efficiency and reduce energy losses due to its low forward voltage drop. Alternative Components: 1. BAT54C: This is a dual Schottky diode with similar characteristics to the BAR81WH6327XTSA1, suitable for high-speed and low-voltage applications. 2. SS14: Another alternative, the SS14 is a surface-mount Schottky diode commonly used in rectifier and clamping circuits. Embedded Modules: The BAR81WH6327XTSA1 can be integrated into various embedded modules such as RF transmitters/receivers, signal processing units, power management circuits, and voltage regulators. Related Q&A: Q1: What are the key advantages of using Schottky diodes like the BAR81WH6327XTSA1 in electronic circuits? Q2: How does the BAR81WH6327XTSA1 compare to standard silicon diodes in terms of performance and efficiency? Q3: Can the BAR81WH6327XTSA1 be used in reverse-biased mode, and what implications does this have on its functionality? Q4: Are there any specific thermal considerations or power dissipation limits that need to be taken into account when using the BAR81WH6327XTSA1 in a circuit? Q5: What are the common failure modes associated with Schottky diodes, and how can these be mitigated in circuit design for reliable operation?

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BAR81WH6327XTSA1 provided by Infineon Technologies

Infineon Technologies AG (OTCMKTS: IFNNY) is a global semiconductor leader in power systems and IoT. Infineon drives decarbonization and digitalization with its products and solutions. The company's semiconductor products include ASIC, Battery Management ICs, Clocks & Timing Solutions, ESD and Surge Protection, Memories Microcontroller, RF, Security & smart card solutions, Sensor, Small Signal Transistors & Diodes, Transceivers, Wireless Connectivity, Software, and more. These products are used in automotive, green industrial power, power management, sensing solutions, and security in IoT applications. Infineon Technologies was founded in 1999 as a spin-off from Siemens AG. The company is headquartered in Neubiberg, near Munich, Germany, and boasts approximately 56,200 employees and 155 locations worldwide.