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GeneSiC Semiconductor S40VR
Manufacturer # :S40VR
Manufacturer :GeneSiC Semiconductor
Dasenic # :S40VR-DS
Datasheet : S40VR Datasheet
Customer # :
Description : DIODE GEN PURP REV 1.4KV 40A DO5
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In Stock: 1663
MOQ :1 PCS
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Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 16.46
Total :$ 16.46
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S40VR information
GeneSiC Semiconductor S40VR technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Diodes - Rectifiers - Single
- Product Status:Active
- Mounting Type:Chassis, Stud Mount
- Package / Case:DO-203AB, DO-5, Stud
- Supplier Device Package:DO-5
- Speed:Standard Recovery >500ns, > 200mA (Io)
- Diode Type:Standard, Reverse Polarity
- Current - Average Rectified ( Io):40A
- Voltage - Forward ( Vf) ( Max) @ If:1.1 V @ 40 A
- Current - Reverse Leakage @ Vr:10 µA @ 100 V
- Capacitance @ Vr, F:-
- Voltage - D C Reverse ( Vr) ( Max):1400 V
- Reverse Recovery Time (trr):-
- Operating Temperature - Junction:-65°C ~ 160°C
- EU RoHS Status:RoHS Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.10.0080
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
S40VR provided by GeneSiC Semiconductor
GeneSiC Semiconductor is a pioneer and world-leader in silicon carbide (SiC) technology. Leading global manufacturers depend on GeneSiC’s technology to elevate the performance and efficiency of their products. GeneSiC’s electronic components run cooler, faster, and more economically and play a key role in conserving energy in a wide array of high-power systems. GeneSiC holds leading patents on wide band-gap power device technologies, a market that is projected to reach more than $5 billion by 2025. Our core strengths of design, process and technology add more value to our customers’ end-product, with performance and cost metrics setting new standards in the silicon carbide industry.
In August 2022,Navitas Semiconductor (Nasdaq: NVTS)announced the acquisition of GeneSiC Semiconductor.
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