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GeneSiC Semiconductor MURTA200120R
DIODE GEN 1.2KV 100A 3 TOWER
Manufacturer # :MURTA200120R
Manufacturer :GeneSiC Semiconductor
Dasenic # :0DD22F-DS
Datasheet :
MURTA200120R Datasheet
MURTA200120R DatasheetSample :
Customer # :
Description : DIODE GEN 1.2KV 100A 3 TOWER Three Tower Bulk
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 48+ | $ 290.620000 | $ 13949.76 |
In Stock: 750
MOQ :1 PCS
Packaging :Three Tower Bulk
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price : $ 290.62
Total :$ 290.62
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- Category:Discrete Semiconductor Devices/Diode Arrays
- Product Status:Active
- Mounting Type:Chassis Mount
- Technology:Standard
- Supplier Device Package:Three Tower
- Speed:Standard Recovery >500ns, > 200mA (Io)
- Voltage - Forward ( Vf) ( Max) @ If:2.6 V @ 100 A
- Current - Reverse Leakage @ Vr:25 µA @ 1200 V
- Diode Configuration:1 Pair Common Anode
- Voltage - D C Reverse ( Vr) ( Max):1200 V
- Current - Average Rectified ( Io) (per Diode):100A
- Operating Temperature - Junction:-55°C ~ 150°C
- Base Product Number:MURTA200120
