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GeneSiC Semiconductor MURT40010
DIODE MODULE 100V 200A 3TOWER
Manufacturer # :MURT40010
Manufacturer :GeneSiC Semiconductor
Dasenic # :MURT40010-DS
Datasheet :
MURT40010 Datasheet
MURT40010 DatasheetCustomer # :
Description : DIODE MODULE 100V 200A 3TOWER
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 20+ | $ 284.0400 | $ 5680.8 |
| 40+ | $ 270.9400 | $ 10837.6 |
| 80+ | $ 258.9800 | $ 20718.4 |
In Stock: 1194
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 284.04
Total :$ 284.04
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Payment :
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MURT40010 information
GeneSiC Semiconductor MURT40010 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Diodes - Rectifiers - Arrays
- Product Status:Active
- Mounting Type:Chassis Mount
- Package / Case:Three Tower
- Supplier Device Package:Three Tower
- Speed:Fast Recovery =< 500ns, > 200mA (Io)
- Diode Type:Standard
- Voltage - Forward ( Vf) ( Max) @ If:1.3 V @ 200 A
- Current - Reverse Leakage @ Vr:25 µA @ 50 V
- Diode Configuration:1 Pair Common Cathode
- Voltage - D C Reverse ( Vr) ( Max):100 V
- Current - Average Rectified ( Io) (per Diode):200A
- Reverse Recovery Time (trr):125 ns
- Operating Temperature - Junction:-55°C ~ 150°C
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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