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GeneSiC Semiconductor MUR2X030A12
DIODE GEN PURP 1200V 30A SOT227
Manufacturer # :MUR2X030A12
Manufacturer :GeneSiC Semiconductor
Dasenic # :MUR2X030A12-DS
Datasheet :
MUR2X030A12 Datasheet
MUR2X030A12 DatasheetCustomer # :
Description : DIODE GEN PURP 1200V 30A SOT227
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 20+ | $ 74.9400 | $ 1498.8 |
| 39+ | $ 47.3000 | $ 1844.7 |
| 59+ | $ 37.1200 | $ 2190.08 |
| 78+ | $ 36.3800 | $ 2837.64 |
In Stock: 2666
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 74.94
Total :$ 74.94
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Payment :
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MUR2X030A12 information
GeneSiC Semiconductor MUR2X030A12 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Diodes - Rectifiers - Arrays
- Product Status:Obsolete
- Mounting Type:Chassis Mount
- Package / Case:SOT-227-4, miniBLOC
- Supplier Device Package:SOT-227
- Speed:Fast Recovery =< 500ns, > 200mA (Io)
- Diode Type:Standard
- Voltage - Forward ( Vf) ( Max) @ If:2.35 V @ 30 A
- Current - Reverse Leakage @ Vr:25 µA @ 1200 V
- Diode Configuration:2 Independent
- Voltage - D C Reverse ( Vr) ( Max):1200 V
- Current - Average Rectified ( Io) (per Diode):30A
- Reverse Recovery Time (trr):85 ns
- Operating Temperature - Junction:-65°C ~ 175°C
- EU RoHS Status:RoHS Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.10.0080
- REACH Status:Vendor is not defined
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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