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GeneSiC Semiconductor MUR20040CT
DIODE MODULE 400V 100A 2TOWER
Manufacturer # :MUR20040CT
Manufacturer :GeneSiC Semiconductor
Dasenic # :MUR20040CT-DS
Datasheet :
MUR20040CT Datasheet
MUR20040CT DatasheetCustomer # :
Description : DIODE MODULE 400V 100A 2TOWER
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 510.6200 | $ 510.62 |
| 5+ | $ 502.9600 | $ 2514.8 |
| 10+ | $ 495.4200 | $ 4954.2 |
| 20+ | $ 487.9800 | $ 9759.6 |
| 40+ | $ 257.5400 | $ 10301.6 |
In Stock: 1504
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 510.62
Total :$ 510.62
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MUR20040CT information
GeneSiC Semiconductor MUR20040CT technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Diodes - Rectifiers - Arrays
- Product Status:Active
- Mounting Type:Chassis Mount
- Package / Case:Twin Tower
- Supplier Device Package:Twin Tower
- Speed:Fast Recovery =< 500ns, > 200mA (Io)
- Diode Type:Schottky
- Voltage - Forward ( Vf) ( Max) @ If:1.3 V @ 50 A
- Current - Reverse Leakage @ Vr:25 µA @ 50 V
- Diode Configuration:1 Pair Common Cathode
- Voltage - D C Reverse ( Vr) ( Max):400 V
- Current - Average Rectified ( Io) (per Diode):100A
- Reverse Recovery Time (trr):90 ns
- Operating Temperature - Junction:-55°C ~ 150°C
- EU RoHS Status:RoHS Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.10.0080
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
MUR20040CT provided by GeneSiC Semiconductor
GeneSiC Semiconductor is a pioneer and world-leader in silicon carbide (SiC) technology. Leading global manufacturers depend on GeneSiC’s technology to elevate the performance and efficiency of their products. GeneSiC’s electronic components run cooler, faster, and more economically and play a key role in conserving energy in a wide array of high-power systems. GeneSiC holds leading patents on wide band-gap power device technologies, a market that is projected to reach more than $5 billion by 2025. Our core strengths of design, process and technology add more value to our customers’ end-product, with performance and cost metrics setting new standards in the silicon carbide industry.
In August 2022,Navitas Semiconductor (Nasdaq: NVTS)announced the acquisition of GeneSiC Semiconductor.
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