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GeneSiC Semiconductor MSRTA60060(A)
DIODE MODULE 600V 600A 3TOWER
Manufacturer # :MSRTA60060(A)
Manufacturer :GeneSiC Semiconductor
Dasenic # :D4C9A4-DS
Datasheet :
MSRTA60060(A) Datasheet
MSRTA60060(A) DatasheetSample :
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Description : DIODE MODULE 600V 600A 3TOWER Three Tower
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In Stock: 3000
MOQ :1 PCS
Packaging :Three Tower
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
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Unit Price : $ 0
Total :$ 0.00
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- Category:Discrete Semiconductor Devices/Diode Arrays
- Product Status:Active
- Mounting Type:Chassis Mount
- Package / Case:Three Tower
- Supplier Device Package:Three Tower
- Speed:Standard Recovery >500ns, > 200mA (Io)
- Diode Type:Standard
- Voltage - Forward ( Vf) ( Max) @ If:1.2 V @ 600 A
- Current - Reverse Leakage @ Vr:25 µA @ 600 V
- Diode Configuration:1 Pair Common Cathode
- Voltage - D C Reverse ( Vr) ( Max):600 V
- Current - Average Rectified ( Io) (per Diode):600A (DC)
- Operating Temperature - Junction:-40°C ~ 175°C
