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GeneSiC Semiconductor MSRTA200160AD
DIODE GEN 1.6KV 200A 3 TOWER
Manufacturer # :MSRTA200160AD
Manufacturer :GeneSiC Semiconductor
Dasenic # :MSRTA200160AD-DS
Datasheet :
MSRTA200160AD Datasheet
MSRTA200160AD DatasheetCustomer # :
Description : DIODE GEN 1.6KV 200A 3 TOWER
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 12+ | $ 306.1600 | $ 3673.92 |
| 24+ | $ 292.0200 | $ 7008.48 |
| 48+ | $ 279.1400 | $ 13398.72 |
In Stock: 1044
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 306.16
Total :$ 306.16
Delivery :
Payment :
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MSRTA200160AD information
GeneSiC Semiconductor MSRTA200160AD technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Diodes - Rectifiers - Arrays
- Product Status:Active
- Mounting Type:Chassis Mount
- Package / Case:Three Tower
- Supplier Device Package:Three Tower
- Speed:Standard Recovery >500ns, > 200mA (Io)
- Diode Type:Standard
- Voltage - Forward ( Vf) ( Max) @ If:1.1 V @ 200 A
- Current - Reverse Leakage @ Vr:10 µA @ 1600 V
- Diode Configuration:1 Pair Series Connection
- Voltage - D C Reverse ( Vr) ( Max):1600 V
- Current - Average Rectified ( Io) (per Diode):200A
- Reverse Recovery Time (trr):-
- Operating Temperature - Junction:-55°C ~ 150°C
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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