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GeneSiC Semiconductor MSRTA200120(A)D
DIODE GEN 1.2KV 200A 3 TOWER
Manufacturer # :MSRTA200120(A)D
Manufacturer :GeneSiC Semiconductor
Dasenic # :MSRTA200120(A)D-DS
Datasheet :
MSRTA200120(A)D Datasheet
MSRTA200120(A)D DatasheetCustomer # :
Description : DIODE GEN 1.2KV 200A 3 TOWER
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 48+ | $ 284.7000 | $ 13665.6 |
In Stock: 613
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 284.7
Total :$ 284.70
Delivery :
Payment :
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MSRTA200120(A)D information
GeneSiC Semiconductor MSRTA200120(A)D technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Diodes - Rectifiers - Arrays
- Product Status:Active
- Mounting Type:Chassis Mount
- Package / Case:Three Tower
- Supplier Device Package:Three Tower
- Speed:Standard Recovery >500ns, > 200mA (Io)
- Diode Type:Standard
- Voltage - Forward ( Vf) ( Max) @ If:1.1 V @ 200 A
- Current - Reverse Leakage @ Vr:10 µA @ 1200 V
- Diode Configuration:1 Pair Series Connection
- Voltage - D C Reverse ( Vr) ( Max):1200 V
- Current - Average Rectified ( Io) (per Diode):200A
- Reverse Recovery Time (trr):-
- Operating Temperature - Junction:-55°C ~ 150°C
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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