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GeneSiC Semiconductor MSRT200100(A)D

DIODE GEN 1KV 200A 3 TOWER
part number has RoHS
Manufacturer # :MSRT200100(A)D
Manufacturer :GeneSiC Semiconductor
Dasenic # :MSRT200100(A)D-DS
Customer # :
Description : DIODE GEN 1KV 200A 3 TOWER
Pricing (USD) : *To apply for a price, please click the Send Target Price button
QuantityUnit PriceTotal
20+$ 528.5000$ 10570
40+$ 278.9200$ 11156.8
60+$ 191.8200$ 11509.2
80+$ 187.9800$ 15038.4
In Stock: 678
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 528.5
Total :$ 528.50
Delivery :
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MSRT200100(A)D information

  • GeneSiC Semiconductor MSRT200100(A)D technical specifications, attributes, parameters.
  • Category:Discrete Semiconductor Devices/Diodes - Rectifiers - Arrays
  • Product Status:Active
  • Mounting Type:Chassis Mount
  • Package / Case:Three Tower
  • Supplier Device Package:Three Tower
  • Speed:Standard Recovery >500ns, > 200mA (Io)
  • Diode Type:Standard
  • Voltage - Forward ( Vf) ( Max) @ If:1.1 V @ 200 A
  • Current - Reverse Leakage @ Vr:10 µA @ 1000 V
  • Diode Configuration:1 Pair Series Connection
  • Voltage - D C Reverse ( Vr) ( Max):1000 V
  • Current - Average Rectified ( Io) (per Diode):200A
  • Reverse Recovery Time (trr):-
  • Operating Temperature - Junction:-55°C ~ 150°C
  • EU RoHS Status:RoHS Compliant
  • REACH Status:REACH is not affected
  • US ECCN:EAR99
  • China RoHS Status:Green Symbol: Green and environmentally friendly product

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