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GeneSiC Semiconductor MBRTA40035RL
DIODE SCHOTTKY 35V 200A 3TOWER
Manufacturer # :MBRTA40035RL
Manufacturer :GeneSiC Semiconductor
Dasenic # :93E349-DS
Datasheet :
MBRTA40035RL Datasheet
MBRTA40035RL DatasheetSample :
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Description : DIODE SCHOTTKY 35V 200A 3TOWER Three Tower
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In Stock: 87
MOQ :1 PCS
Packaging :Three Tower
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
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Unit Price : $ 0
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- Category:Discrete Semiconductor Devices/Diode Arrays
- Product Status:Obsolete
- Mounting Type:Chassis Mount
- Package / Case:Three Tower
- Supplier Device Package:Three Tower
- Speed:Fast Recovery =< 500ns, > 200mA (Io)
- Diode Type:Schottky
- Voltage - Forward ( Vf) ( Max) @ If:600 mV @ 200 A
- Current - Reverse Leakage @ Vr:3 mA @ 35 V
- Diode Configuration:1 Pair Common Anode
- Voltage - D C Reverse ( Vr) ( Max):35 V
- Current - Average Rectified ( Io) (per Diode):200A
- Operating Temperature - Junction:-55°C ~ 150°C
