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GeneSiC Semiconductor MBRT400100R
Manufacturer # :MBRT400100R
Manufacturer :GeneSiC Semiconductor
Dasenic # :MBRT400100R-DS
Datasheet : MBRT400100R Datasheet
Customer # :
Description : DIODE MODULE 100V 200A 3TOWER
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In Stock: 1505
MOQ :1 PCS
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Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 243.3
Total :$ 243.30
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MBRT400100R information
GeneSiC Semiconductor MBRT400100R technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Diodes - Rectifiers - Arrays
- Product Status:Active
- Mounting Type:Chassis Mount
- Package / Case:Three Tower
- Supplier Device Package:Three Tower
- Speed:Fast Recovery =< 500ns, > 200mA (Io)
- Diode Type:Schottky, Reverse Polarity
- Voltage - Forward ( Vf) ( Max) @ If:880 mV @ 200 A
- Current - Reverse Leakage @ Vr:1 mA @ 20 V
- Diode Configuration:1 Pair Common Anode
- Voltage - D C Reverse ( Vr) ( Max):100 V
- Current - Average Rectified ( Io) (per Diode):200A
- Reverse Recovery Time (trr):-
- Operating Temperature - Junction:-55°C ~ 150°C
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
MBRT400100R provided by GeneSiC Semiconductor
GeneSiC Semiconductor is a pioneer and world-leader in silicon carbide (SiC) technology. Leading global manufacturers depend on GeneSiC’s technology to elevate the performance and efficiency of their products. GeneSiC’s electronic components run cooler, faster, and more economically and play a key role in conserving energy in a wide array of high-power systems. GeneSiC holds leading patents on wide band-gap power device technologies, a market that is projected to reach more than $5 billion by 2025. Our core strengths of design, process and technology add more value to our customers’ end-product, with performance and cost metrics setting new standards in the silicon carbide industry.
In August 2022,Navitas Semiconductor (Nasdaq: NVTS)announced the acquisition of GeneSiC Semiconductor.
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