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GeneSiC Semiconductor MBRH15020L
Manufacturer # :MBRH15020L
Manufacturer :GeneSiC Semiconductor
Dasenic # :MBRH15020L-DS
Datasheet : MBRH15020L Datasheet
Customer # :
Description : DIODE SCHOTTKY 20V 150A D-67
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In Stock: 815
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 36
Total :$ 36.00
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MBRH15020L information
GeneSiC Semiconductor MBRH15020L technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Diodes - Rectifiers - Single
- Product Status:Obsolete
- Mounting Type:Chassis Mount
- Package / Case:D-67
- Supplier Device Package:D-67
- Speed:Fast Recovery =< 500ns, > 200mA (Io)
- Diode Type:Schottky
- Current - Average Rectified ( Io):150A
- Voltage - Forward ( Vf) ( Max) @ If:580 mV @ 150 A
- Current - Reverse Leakage @ Vr:3 mA @ 20 V
- Capacitance @ Vr, F:-
- Voltage - D C Reverse ( Vr) ( Max):20 V
- Reverse Recovery Time (trr):-
- Operating Temperature - Junction:-
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.10.0080
- EU RoHS Status:RoHS Compliant
- REACH Status:Vendor is not defined
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
MBRH15020L provided by GeneSiC Semiconductor
GeneSiC Semiconductor is a pioneer and world-leader in silicon carbide (SiC) technology. Leading global manufacturers depend on GeneSiC’s technology to elevate the performance and efficiency of their products. GeneSiC’s electronic components run cooler, faster, and more economically and play a key role in conserving energy in a wide array of high-power systems. GeneSiC holds leading patents on wide band-gap power device technologies, a market that is projected to reach more than $5 billion by 2025. Our core strengths of design, process and technology add more value to our customers’ end-product, with performance and cost metrics setting new standards in the silicon carbide industry.
In August 2022,Navitas Semiconductor (Nasdaq: NVTS)announced the acquisition of GeneSiC Semiconductor.
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