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GeneSiC Semiconductor MBR60035CTL
DIODE SCHOTTKY 35V 300A 2 TOWER
Manufacturer # :MBR60035CTL
Manufacturer :GeneSiC Semiconductor
Dasenic # :MBR60035CTL-DS
Datasheet :
MBR60035CTL Datasheet
MBR60035CTL DatasheetCustomer # :
Description : DIODE SCHOTTKY 35V 300A 2 TOWER
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 25+ | $ 165.0000 | $ 4125 |
In Stock: 2432
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 165
Total :$ 165.00
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MBR60035CTL information
GeneSiC Semiconductor MBR60035CTL technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Diodes - Rectifiers - Arrays
- Product Status:Obsolete
- Mounting Type:Chassis Mount
- Package / Case:Twin Tower
- Supplier Device Package:Twin Tower
- Speed:Fast Recovery =< 500ns, > 200mA (Io)
- Diode Type:Schottky
- Voltage - Forward ( Vf) ( Max) @ If:600 mV @ 300 A
- Current - Reverse Leakage @ Vr:3 mA @ 35 V
- Diode Configuration:1 Pair Common Cathode
- Voltage - D C Reverse ( Vr) ( Max):35 V
- Current - Average Rectified ( Io) (per Diode):300A
- Reverse Recovery Time (trr):-
- Operating Temperature - Junction:-55°C ~ 150°C
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.10.0080
- EU RoHS Status:RoHS Compliant
- REACH Status:Vendor is not defined
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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