Name: MBR60020CTL
Brand: GeneSiC Semiconductor
SKU: DS-5777094
Price: 165 USD
Availability: InStock
Rating: 4.8 (3 reviews)

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GeneSiC Semiconductor MBR60020CTL

DIODE SCHOTTKY 20V 300A 2 TOWER

Manufacturer # :MBR60020CTL

Manufacturer :GeneSiC Semiconductor

Dasenic # :MBR60020CTL-DS

Datasheet :

MBR60020CTL Datasheet

Customer # :

Customer #

Description : DIODE SCHOTTKY 20V 300A 2 TOWER

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Quantity	Unit Price	Total
25+	$ 165.0000	$ 4125

In Stock: 2003

MOQ :1 PCS

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Delivery Time :Ship Within 48 Hours

Shipping Origin :Shenzhen or Hong Kong Warehouse

Quantity :

Unit Price :$ 165

Total :$ 165.00

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MBR60020CTL information

GeneSiC Semiconductor MBR60020CTL technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Diodes - Rectifiers - Arrays
Product Status:Obsolete
Mounting Type:Chassis Mount
Package / Case:Twin Tower
Supplier Device Package:Twin Tower
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Diode Type:Schottky
Voltage - Forward ( Vf) ( Max) @ If:580 mV @ 300 A
Current - Reverse Leakage @ Vr:3 mA @ 20 V
Diode Configuration:1 Pair Common Cathode
Voltage - D C Reverse ( Vr) ( Max):20 V
Current - Average Rectified ( Io) (per Diode):300A
Reverse Recovery Time (trr):-
Operating Temperature - Junction:-55°C ~ 150°C
MSL Rating:1 (Unlimited, 30°C/85%RH)
US ECCN:EAR99
HTS US:8541.10.0080
EU RoHS Status:RoHS Compliant
REACH Status:Vendor is not defined
China RoHS Status:Orange Symbol: Safe for use during the environmental protection period

Download datasheets and manufacturer documentation for GeneSiC Semiconductor MBR60020CTL
Datasheet:
MBR60020CTL,

GeneSiC Semiconductor MBR60020CTL Environmental and export classification status description

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MBR60020CTL provided by GeneSiC Semiconductor

GeneSiC Semiconductor is a pioneer and world-leader in silicon carbide (SiC) technology. Leading global manufacturers depend on GeneSiC’s technology to elevate the performance and efficiency of their products. GeneSiC’s electronic components run cooler, faster, and more economically and play a key role in conserving energy in a wide array of high-power systems. GeneSiC holds leading patents on wide band-gap power device technologies, a market that is projected to reach more than $5 billion by 2025. Our core strengths of design, process and technology add more value to our customers’ end-product, with performance and cost metrics setting new standards in the silicon carbide industry. In August 2022,Navitas Semiconductor (Nasdaq: NVTS)announced the acquisition of GeneSiC Semiconductor.