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GeneSiC Semiconductor MBR600150CTR
DIODE SCHOTTKY 150V 300A 2 TOWER
Manufacturer # :MBR600150CTR
Manufacturer :GeneSiC Semiconductor
Dasenic # :MBR600150CTR-DS
Datasheet :
MBR600150CTR Datasheet
MBR600150CTR DatasheetCustomer # :
Description : DIODE SCHOTTKY 150V 300A 2 TOWER
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 346.4000 | $ 346.4 |
| 25+ | $ 300.2000 | $ 7505 |
In Stock: 2649
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 346.4
Total :$ 346.40
Delivery :
Payment :
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MBR600150CTR information
GeneSiC Semiconductor MBR600150CTR technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Diodes - Rectifiers - Arrays
- Product Status:Active
- Mounting Type:Chassis Mount
- Package / Case:Twin Tower
- Supplier Device Package:Twin Tower
- Speed:Fast Recovery =< 500ns, > 200mA (Io)
- Diode Type:Schottky
- Voltage - Forward ( Vf) ( Max) @ If:880 mV @ 300 A
- Current - Reverse Leakage @ Vr:3 mA @ 150 V
- Diode Configuration:1 Pair Common Anode
- Voltage - D C Reverse ( Vr) ( Max):150 V
- Current - Average Rectified ( Io) (per Diode):300A
- Reverse Recovery Time (trr):-
- Operating Temperature - Junction:-55°C ~ 150°C
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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