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GeneSiC Semiconductor MBR2X120A045
DIODE SCHOTTKY 45V 120A SOT227
Manufacturer # :MBR2X120A045
Manufacturer :GeneSiC Semiconductor
Dasenic # :MBR2X120A045-DS
Datasheet :
MBR2X120A045 Datasheet
MBR2X120A045 DatasheetCustomer # :
Description : DIODE SCHOTTKY 45V 120A SOT227
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 51.3720 | $ 51.37 |
| 10+ | $ 44.7120 | $ 447.12 |
| 25+ | $ 42.3090 | $ 1057.73 |
| 52+ | $ 40.5720 | $ 2109.74 |
| 104+ | $ 38.9070 | $ 4046.33 |
In Stock: 1812
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 51.372
Total :$ 51.37
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MBR2X120A045 information
GeneSiC Semiconductor MBR2X120A045 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Diodes - Rectifiers - Arrays
- Product Status:Active
- Mounting Type:Chassis Mount
- Package / Case:SOT-227-4, miniBLOC
- Supplier Device Package:SOT-227
- Speed:Fast Recovery =< 500ns, > 200mA (Io)
- Diode Type:Schottky
- Voltage - Forward ( Vf) ( Max) @ If:700 mV @ 120 A
- Current - Reverse Leakage @ Vr:1 mA @ 45 V
- Diode Configuration:2 Independent
- Voltage - D C Reverse ( Vr) ( Max):45 V
- Current - Average Rectified ( Io) (per Diode):120A
- Reverse Recovery Time (trr):-
- Operating Temperature - Junction:-40°C ~ 150°C
- EU RoHS Status:RoHS Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.10.0080
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
MBR2X120A045 provided by GeneSiC Semiconductor
GeneSiC Semiconductor is a pioneer and world-leader in silicon carbide (SiC) technology. Leading global manufacturers depend on GeneSiC’s technology to elevate the performance and efficiency of their products. GeneSiC’s electronic components run cooler, faster, and more economically and play a key role in conserving energy in a wide array of high-power systems. GeneSiC holds leading patents on wide band-gap power device technologies, a market that is projected to reach more than $5 billion by 2025. Our core strengths of design, process and technology add more value to our customers’ end-product, with performance and cost metrics setting new standards in the silicon carbide industry.
In August 2022,Navitas Semiconductor (Nasdaq: NVTS)announced the acquisition of GeneSiC Semiconductor.
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