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GeneSiC Semiconductor MBR2X050A180
- Mfr.Part # :MBR2X050A180
- Manufacturer :GeneSiC Semiconductor
- Dasenic # :MBR2X050A180-DS
- Datasheet : MBR2X050A180 Datasheet
- Description : DIODE SCHOTTKY 180V 50A SOT227
- Package :-
- Quantity :Unit Price : $ 93.9Total : $ 93.90
- Delivery Time :Ship Within 48 Hours
- Shipping Origin :Shenzhen or Hong Kong Warehouse
- Delivery :
- Payment :
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GeneSiC Semiconductor MBR2X050A180 technical specifications, attributes, parameters.
Category:Discrete Semiconductor Devices/Diodes - Rectifiers - Arrays
Product Status:Active
Mounting Type:Chassis Mount
Package / Case:SOT-227-4, miniBLOC
Supplier Device Package:SOT-227
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Diode Type:Schottky
Voltage - Forward ( Vf) ( Max) @ If:920 mV @ 50 A
Current - Reverse Leakage @ Vr:3 mA @ 180 V
Diode Configuration:2 Independent
Voltage - D C Reverse ( Vr) ( Max):180 V
Current - Average Rectified ( Io) (per Diode):50A
Reverse Recovery Time (trr):-
Operating Temperature - Junction:-40°C ~ 150°C
EU RoHS Status:RoHS Compliant
MSL Rating:1 (Unlimited, 30°C/85%RH)
US ECCN:EAR99
HTS US:8541.10.0080
REACH Status:REACH is not affected
China RoHS Status:Green Symbol: Green and environmentally friendly product
MBR2X050A180 provided by GeneSiC Semiconductor
GeneSiC Semiconductor is a pioneer and world-leader in silicon carbide (SiC) technology. Leading global manufacturers depend on GeneSiC’s technology to elevate the performance and efficiency of their products. GeneSiC’s electronic components run cooler, faster, and more economically and play a key role in conserving energy in a wide array of high-power systems. GeneSiC holds leading patents on wide band-gap power device technologies, a market that is projected to reach more than $5 billion by 2025. Our core strengths of design, process and technology add more value to our customers’ end-product, with performance and cost metrics setting new standards in the silicon carbide industry.
In August 2022,Navitas Semiconductor (Nasdaq: NVTS)announced the acquisition of GeneSiC Semiconductor.
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