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GeneSiC Semiconductor MBR20030CT
DIODE MODULE 30V 200A 2TOWER
Manufacturer # :MBR20030CT
Manufacturer :GeneSiC Semiconductor
Dasenic # :MBR20030CT-DS
Datasheet :
MBR20030CT Datasheet
MBR20030CT DatasheetCustomer # :
Description : DIODE MODULE 30V 200A 2TOWER
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 20+ | $ 193.8600 | $ 3877.2 |
| 40+ | $ 184.9000 | $ 7396 |
| 80+ | $ 176.7600 | $ 14140.8 |
In Stock: 1899
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 193.86
Total :$ 193.86
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MBR20030CT information
GeneSiC Semiconductor MBR20030CT technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Diodes - Rectifiers - Arrays
- Product Status:Active
- Mounting Type:Chassis Mount
- Package / Case:Twin Tower
- Supplier Device Package:Twin Tower
- Speed:Fast Recovery =< 500ns, > 200mA (Io)
- Diode Type:Schottky
- Voltage - Forward ( Vf) ( Max) @ If:650 mV @ 100 A
- Current - Reverse Leakage @ Vr:5 mA @ 20 V
- Diode Configuration:1 Pair Common Cathode
- Voltage - D C Reverse ( Vr) ( Max):30 V
- Current - Average Rectified ( Io) (per Diode):200A (DC)
- Reverse Recovery Time (trr):-
- Operating Temperature - Junction:-55°C ~ 150°C
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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