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GeneSiC Semiconductor GD2X100MPS12N
1200V 200A SOT-227 SIC SCHOTTKY
Manufacturer # :GD2X100MPS12N
Manufacturer :GeneSiC Semiconductor
Dasenic # :GD2X100MPS12N-DS
Datasheet :
GD2X100MPS12N Datasheet
GD2X100MPS12N DatasheetCustomer # :
Description : 1200V 200A SOT-227 SIC SCHOTTKY
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 68.4720 | $ 68.47 |
| 10+ | $ 66.7620 | $ 667.62 |
| 25+ | $ 65.0790 | $ 1626.98 |
| 50+ | $ 64.2690 | $ 3213.45 |
| 100+ | $ 62.7480 | $ 6274.8 |
In Stock: 1762
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 68.472
Total :$ 68.47
Delivery :
Payment :
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GD2X100MPS12N information
GeneSiC Semiconductor GD2X100MPS12N technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Diodes - Rectifiers - Arrays
- Product Status:Active
- Mounting Type:Chassis Mount
- Package / Case:SOT-227-4, miniBLOC
- Supplier Device Package:SOT-227
- Speed:No Recovery Time > 500mA (Io)
- Diode Type:Silicon Carbide Schottky
- Voltage - Forward ( Vf) ( Max) @ If:1.8 V @ 100 A
- Current - Reverse Leakage @ Vr:25 µA @ 1200 V
- Diode Configuration:2 Independent
- Voltage - D C Reverse ( Vr) ( Max):1200 V
- Current - Average Rectified ( Io) (per Diode):136A (DC)
- Reverse Recovery Time (trr):0 ns
- Operating Temperature - Junction:-55°C ~ 175°C
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- REACH Status:REACH Unaffected
- US ECCN:EAR99
- HTS US:8541.10.0080
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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