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GeneSiC Semiconductor GD2X100MPS06N
650V 200A SOT-227 SIC SCHOTTKY M
Manufacturer # :GD2X100MPS06N
Manufacturer :GeneSiC Semiconductor
Dasenic # :GD2X100MPS06N-DS
Datasheet :
GD2X100MPS06N Datasheet
GD2X100MPS06N DatasheetCustomer # :
Description : 650V 200A SOT-227 SIC SCHOTTKY M
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 43.1190 | $ 43.12 |
| 10+ | $ 39.5730 | $ 395.73 |
| 25+ | $ 43.1190 | $ 1077.98 |
| 100+ | $ 36.3150 | $ 3631.5 |
| 250+ | $ 35.1002 | $ 8775.05 |
In Stock: 3840
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 43.119
Total :$ 43.12
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Payment :
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GD2X100MPS06N information
GeneSiC Semiconductor GD2X100MPS06N technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Diodes - Rectifiers - Arrays
- Product Status:Active
- Mounting Type:Chassis Mount
- Package / Case:SOT-227-4, miniBLOC
- Supplier Device Package:SOT-227
- Speed:No Recovery Time > 500mA (Io)
- Diode Type:Silicon Carbide Schottky
- Voltage - Forward ( Vf) ( Max) @ If:1.8 V @ 100 A
- Current - Reverse Leakage @ Vr:5 µA @ 650 V
- Diode Configuration:2 Independent
- Voltage - D C Reverse ( Vr) ( Max):650 V
- Current - Average Rectified ( Io) (per Diode):108A (DC)
- Reverse Recovery Time (trr):0 ns
- Operating Temperature - Junction:-55°C ~ 175°C
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- REACH Status:REACH Unaffected
- US ECCN:EAR99
- HTS US:8541.10.0080
- China RoHS Status:Green Symbol: Green and environmentally friendly product
GD2X100MPS06N provided by GeneSiC Semiconductor
GeneSiC Semiconductor is a pioneer and world-leader in silicon carbide (SiC) technology. Leading global manufacturers depend on GeneSiC’s technology to elevate the performance and efficiency of their products. GeneSiC’s electronic components run cooler, faster, and more economically and play a key role in conserving energy in a wide array of high-power systems. GeneSiC holds leading patents on wide band-gap power device technologies, a market that is projected to reach more than $5 billion by 2025. Our core strengths of design, process and technology add more value to our customers’ end-product, with performance and cost metrics setting new standards in the silicon carbide industry.
In August 2022,Navitas Semiconductor (Nasdaq: NVTS)announced the acquisition of GeneSiC Semiconductor.
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