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GeneSiC Semiconductor GD10MPS12E
1200V 10A TO-252-2 SIC SCHOTTKY
Manufacturer # :GD10MPS12E
Manufacturer :GeneSiC Semiconductor
Dasenic # :GD10MPS12E-DS
Datasheet :
GD10MPS12E Datasheet
GD10MPS12E DatasheetCustomer # :
Description : 1200V 10A TO-252-2 SIC SCHOTTKY
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 2.5740 | $ 2.57 |
| 10+ | $ 2.2680 | $ 22.68 |
| 50+ | $ 2.1510 | $ 107.55 |
| 100+ | $ 1.9890 | $ 198.9 |
| 200+ | $ 1.9530 | $ 390.6 |
In Stock: 42000
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 2.574
Total :$ 2.57
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GD10MPS12E information
GeneSiC Semiconductor GD10MPS12E technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Diodes - Rectifiers - Single
- Product Status:Active
- Mounting Type:Surface Mount
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package:TO-252-2
- Speed:No Recovery Time > 500mA (Io)
- Diode Type:Silicon Carbide Schottky
- Current - Average Rectified ( Io):29A (DC)
- Voltage - Forward ( Vf) ( Max) @ If:1.8 V @ 10 A
- Current - Reverse Leakage @ Vr:5 µA @ 1200 V
- Capacitance @ Vr, F:367pF @ 1V, 1MHz
- Voltage - D C Reverse ( Vr) ( Max):1200 V
- Reverse Recovery Time (trr):0 ns
- Operating Temperature - Junction:-55°C ~ 175°C
- EU RoHS Status:ROHS3 Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- REACH Status:REACH Unaffected
- US ECCN:EAR99
- HTS US:8541.10.0080
- China RoHS Status:Green Symbol: Green and environmentally friendly product
GD10MPS12E provided by GeneSiC Semiconductor
GeneSiC Semiconductor is a pioneer and world-leader in silicon carbide (SiC) technology. Leading global manufacturers depend on GeneSiC’s technology to elevate the performance and efficiency of their products. GeneSiC’s electronic components run cooler, faster, and more economically and play a key role in conserving energy in a wide array of high-power systems. GeneSiC holds leading patents on wide band-gap power device technologies, a market that is projected to reach more than $5 billion by 2025. Our core strengths of design, process and technology add more value to our customers’ end-product, with performance and cost metrics setting new standards in the silicon carbide industry.
In August 2022,Navitas Semiconductor (Nasdaq: NVTS)announced the acquisition of GeneSiC Semiconductor.
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