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GeneSiC Semiconductor GBJ35J
Manufacturer # :GBJ35J
Manufacturer :GeneSiC Semiconductor
Dasenic # :GBJ35J-DS
Datasheet : GBJ35J Datasheet
Customer # :
Description : 600V 35A GBJ SINGLE PHASE BRIDGE
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In Stock: 2911
MOQ :1 PCS
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Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 5.31
Total :$ 5.31
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GBJ35J information
GeneSiC Semiconductor GBJ35J technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Diodes - Bridge Rectifiers
- Product Status:Active
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:4-SIP, GBJ
- Technology:Standard
- Supplier Device Package:GBJ
- Diode Type:Single Phase
- Voltage - Peak Reverse ( Max):600 V
- Current - Average Rectified ( Io):35 A
- Voltage - Forward ( Vf) ( Max) @ If:1.1 V @ 17.5 A
- Current - Reverse Leakage @ Vr:10 µA @ 600 V
- Base Product Number:GBJ35
- Packaging:Bulk
- EU RoHS Status:ROHS3 Compliant
- US ECCN:EAR99
- HTS US:8541.10.0080
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
GBJ35J provided by GeneSiC Semiconductor
GeneSiC Semiconductor is a pioneer and world-leader in silicon carbide (SiC) technology. Leading global manufacturers depend on GeneSiC’s technology to elevate the performance and efficiency of their products. GeneSiC’s electronic components run cooler, faster, and more economically and play a key role in conserving energy in a wide array of high-power systems. GeneSiC holds leading patents on wide band-gap power device technologies, a market that is projected to reach more than $5 billion by 2025. Our core strengths of design, process and technology add more value to our customers’ end-product, with performance and cost metrics setting new standards in the silicon carbide industry.
In August 2022,Navitas Semiconductor (Nasdaq: NVTS)announced the acquisition of GeneSiC Semiconductor.
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