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GeneSiC Semiconductor GB2X50MPS12-227
SIC DIODE 1200V 100A SOT-227
Manufacturer # :GB2X50MPS12-227
Manufacturer :GeneSiC Semiconductor
Dasenic # :GB2X50MPS12-227-DS
Datasheet :
GB2X50MPS12-227 Datasheet
GB2X50MPS12-227 DatasheetCustomer # :
Description : SIC DIODE 1200V 100A SOT-227
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 50+ | $ 55.4670 | $ 2773.35 |
In Stock: 8943
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 55.467
Total :$ 55.47
Delivery :
Payment :
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GB2X50MPS12-227 information
GeneSiC Semiconductor GB2X50MPS12-227 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Diodes - Rectifiers - Arrays
- Product Status:Active
- Mounting Type:Chassis Mount
- Package / Case:SOT-227-4, miniBLOC
- Supplier Device Package:SOT-227
- Speed:No Recovery Time > 500mA (Io)
- Diode Type:Silicon Carbide Schottky
- Voltage - Forward ( Vf) ( Max) @ If:1.8 V @ 50 A
- Current - Reverse Leakage @ Vr:40 µA @ 1200 V
- Diode Configuration:2 Independent
- Voltage - D C Reverse ( Vr) ( Max):1200 V
- Current - Average Rectified ( Io) (per Diode):93A (DC)
- Reverse Recovery Time (trr):0 ns
- Operating Temperature - Junction:-55°C ~ 175°C
- EU RoHS Status:RoHS Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- REACH Status:REACH Unaffected
- US ECCN:EAR99
- HTS US:8541.10.0080
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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