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GeneSiC Semiconductor GB100XCP12-227
IGBT MODULE 1200V 100A SOT227
Manufacturer # :GB100XCP12-227
Manufacturer :GeneSiC Semiconductor
Dasenic # :GB100XCP12-227-DS
Datasheet :
GB100XCP12-227 Datasheet
GB100XCP12-227 DatasheetCustomer # :
Description : IGBT MODULE 1200V 100A SOT227
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 38+ | $ 1057.2600 | $ 40175.88 |
| 75+ | $ 547.2000 | $ 41040 |
| 113+ | $ 370.8400 | $ 41904.92 |
| 150+ | $ 363.4200 | $ 54513 |
In Stock: 1993
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 1057.26
Total :$ 1057.26
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GB100XCP12-227 information
GeneSiC Semiconductor GB100XCP12-227 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - IGBTs - Modules
- Product Status:Obsolete
- Operating Temperature:-40°C ~ 175°C (TJ)
- Mounting Type:Chassis Mount
- Package / Case:SOT-227-4
- Power - Max:-
- Supplier Device Package:SOT-227
- Configuration:Single
- Input:Standard
- Current - Collector ( Ic) ( Max):100 A
- Voltage - Collector Emitter Breakdown ( Max):1200 V
- Current - Collector Cutoff ( Max):1 mA
- I G B T Type:PT
- Vce(on) ( Max) @ Vge, Ic:2V @ 15V, 100A
- Input Capacitance ( Cies) @ Vce:8.55 nF @ 25 V
- N T C Thermistor:No
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- EU RoHS Status:RoHS Compliant
- REACH Status:Vendor is not defined
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
GB100XCP12-227 provided by GeneSiC Semiconductor
GeneSiC Semiconductor is a pioneer and world-leader in silicon carbide (SiC) technology. Leading global manufacturers depend on GeneSiC’s technology to elevate the performance and efficiency of their products. GeneSiC’s electronic components run cooler, faster, and more economically and play a key role in conserving energy in a wide array of high-power systems. GeneSiC holds leading patents on wide band-gap power device technologies, a market that is projected to reach more than $5 billion by 2025. Our core strengths of design, process and technology add more value to our customers’ end-product, with performance and cost metrics setting new standards in the silicon carbide industry.
In August 2022,Navitas Semiconductor (Nasdaq: NVTS)announced the acquisition of GeneSiC Semiconductor.
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