Images are for reference only.
1 : $2.8800
First-time registration with orders over $2,000 receives a $100 coupon. Register Now !
GeneSiC Semiconductor GB02SLT12-214
DIODE SCHOTTKY 1.2KV 2A DO214AA
Manufacturer # :GB02SLT12-214
Manufacturer :GeneSiC Semiconductor
Dasenic # :GB02SLT12-214-DS
Datasheet :
GB02SLT12-214 Datasheet
GB02SLT12-214 DatasheetCustomer # :
Description : DIODE SCHOTTKY 1.2KV 2A DO214AA
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 2.8800 | $ 2.88 |
| 10+ | $ 2.5560 | $ 25.56 |
| 25+ | $ 2.4390 | $ 60.98 |
| 100+ | $ 2.2770 | $ 227.7 |
| 250+ | $ 2.1690 | $ 542.25 |
In Stock: 11374
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 2.88
Total :$ 2.88
Delivery :
Payment :
Help you to save your cost and time
Strict quality inspection and Reliable package for goods
Fast Reliable delivery to save time
Provide 365 days warranty after-sales service
GB02SLT12-214 information
GeneSiC Semiconductor GB02SLT12-214 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Diodes - Rectifiers - Single
- Product Status:Active
- Mounting Type:Surface Mount
- Package / Case:DO-214AA, SMB
- Supplier Device Package:DO-214AA
- Speed:No Recovery Time > 500mA (Io)
- Diode Type:Silicon Carbide Schottky
- Current - Average Rectified ( Io):2A (DC)
- Voltage - Forward ( Vf) ( Max) @ If:1.8 V @ 1 A
- Current - Reverse Leakage @ Vr:50 µA @ 1200 V
- Capacitance @ Vr, F:131pF @ 1V, 1MHz
- Voltage - D C Reverse ( Vr) ( Max):1200 V
- Reverse Recovery Time (trr):0 ns
- Operating Temperature - Junction:-55°C ~ 175°C
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
GB02SLT12-214 provided by GeneSiC Semiconductor
GeneSiC Semiconductor is a pioneer and world-leader in silicon carbide (SiC) technology. Leading global manufacturers depend on GeneSiC’s technology to elevate the performance and efficiency of their products. GeneSiC’s electronic components run cooler, faster, and more economically and play a key role in conserving energy in a wide array of high-power systems. GeneSiC holds leading patents on wide band-gap power device technologies, a market that is projected to reach more than $5 billion by 2025. Our core strengths of design, process and technology add more value to our customers’ end-product, with performance and cost metrics setting new standards in the silicon carbide industry.
In August 2022,Navitas Semiconductor (Nasdaq: NVTS)announced the acquisition of GeneSiC Semiconductor.
GeneSiC Semiconductor Related product recommendations
We can prompt fulfill customer requests for electronic components, even for scarce parts in the market.
