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GeneSiC Semiconductor GB01SLT12-252
DIODE SILICON 1.2KV 1A TO252
Manufacturer # :GB01SLT12-252
Manufacturer :GeneSiC Semiconductor
Dasenic # :GB01SLT12-252-DS
Datasheet :
GB01SLT12-252 Datasheet
GB01SLT12-252 DatasheetCustomer # :
Description : DIODE SILICON 1.2KV 1A TO252
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 2.7000 | $ 2.7 |
In Stock: 1966
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 2.7
Total :$ 2.70
Delivery :
Payment :
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GB01SLT12-252 information
GeneSiC Semiconductor GB01SLT12-252 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Diodes - Rectifiers - Single
- Product Status:Active
- Mounting Type:Surface Mount
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package:TO-252
- Speed:No Recovery Time > 500mA (Io)
- Diode Type:Silicon Carbide Schottky
- Current - Average Rectified ( Io):1A
- Voltage - Forward ( Vf) ( Max) @ If:1.8 V @ 1 A
- Current - Reverse Leakage @ Vr:2 µA @ 1200 V
- Capacitance @ Vr, F:69pF @ 1V, 1MHz
- Voltage - D C Reverse ( Vr) ( Max):1200 V
- Reverse Recovery Time (trr):0 ns
- Operating Temperature - Junction:-55°C ~ 175°C
- EU RoHS Status:RoHS Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- REACH Status:REACH Unaffected
- US ECCN:EAR99
- HTS US:8541.10.0080
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
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