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GeneSiC Semiconductor GA50JT12-247
TRANS SJT 1200V 100A TO247AB
Manufacturer # :GA50JT12-247
Manufacturer :GeneSiC Semiconductor
Dasenic # :GA50JT12-247-DS
Datasheet :
GA50JT12-247 Datasheet
GA50JT12-247 DatasheetCustomer # :
Description : TRANS SJT 1200V 100A TO247AB
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 38+ | $ 515.9200 | $ 19604.96 |
| 75+ | $ 267.0200 | $ 20026.5 |
| 113+ | $ 180.9600 | $ 20448.48 |
| 150+ | $ 177.3400 | $ 26601 |
In Stock: 693
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 515.92
Total :$ 515.92
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GA50JT12-247 information
GeneSiC Semiconductor GA50JT12-247 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Obsolete
- Operating Temperature:175°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-247-3
- Technology:SiC (Silicon Carbide Junction Transistor)
- Supplier Device Package:TO-247AB
- Power Dissipation ( Max):583W (Tc)
- F E T Type:-
- F E T Feature:-
- Drain to Source Voltage ( Vdss):1200 V
- Current - Continuous Drain ( Id) @ 25° C:100A (Tc)
- Rds On ( Max) @ Id, Vgs:25mOhm @ 50A
- Vgs(th) ( Max) @ Id:-
- Gate Charge ( Qg) ( Max) @ Vgs:-
- Input Capacitance ( Ciss) ( Max) @ Vds:7209 pF @ 800 V
- Drive Voltage ( Max Rds On, Min Rds On):-
- Vgs ( Max):-
- EU RoHS Status:RoHS Compliant
- REACH Status:Vendor is not defined
- US ECCN:Provided as per user requirements
- China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
GA50JT12-247 provided by GeneSiC Semiconductor
GeneSiC Semiconductor is a pioneer and world-leader in silicon carbide (SiC) technology. Leading global manufacturers depend on GeneSiC’s technology to elevate the performance and efficiency of their products. GeneSiC’s electronic components run cooler, faster, and more economically and play a key role in conserving energy in a wide array of high-power systems. GeneSiC holds leading patents on wide band-gap power device technologies, a market that is projected to reach more than $5 billion by 2025. Our core strengths of design, process and technology add more value to our customers’ end-product, with performance and cost metrics setting new standards in the silicon carbide industry.
In August 2022,Navitas Semiconductor (Nasdaq: NVTS)announced the acquisition of GeneSiC Semiconductor.
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