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GeneSiC Semiconductor GA35XCP12-247

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GeneSiC Semiconductor GA35XCP12-247 technical_specifications

Category:Discrete Semiconductor Devices/Transistors - IGBTs - Single
Product Status:Obsolete
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Input Type:Standard
Power - Max:-
Supplier Device Package:TO-247AB
Reverse Recovery Time (trr):36 ns
Current - Collector ( Ic) ( Max):-
Voltage - Collector Emitter Breakdown ( Max):1200 V
I G B T Type:PT
Vce(on) ( Max) @ Vge, Ic:3V @ 15V, 35A
Current - Collector Pulsed ( Icm):35 A
Switching Energy:2.66mJ (on), 4.35mJ (off)
Gate Charge:50 nC
Td (on/off) @ 25° C:-
Test Condition:800V, 35A, 22Ohm, 15V
MSL Rating:1 (Unlimited, 30°C/85%RH)
US ECCN:EAR99
HTS US:8541.29.0095
EU RoHS Status:RoHS Compliant
REACH Status:Vendor is not defined
China RoHS Status:Orange Symbol: Safe for use during the environmental protection period
GA35XCP12-247 provided by GeneSiC Semiconductor
GeneSiC Semiconductor is a pioneer and world-leader in silicon carbide (SiC) technology. Leading global manufacturers depend on GeneSiC’s technology to elevate the performance and efficiency of their products. GeneSiC’s electronic components run cooler, faster, and more economically and play a key role in conserving energy in a wide array of high-power systems. GeneSiC holds leading patents on wide band-gap power device technologies, a market that is projected to reach more than $5 billion by 2025. Our core strengths of design, process and technology add more value to our customers’ end-product, with performance and cost metrics setting new standards in the silicon carbide industry. In August 2022,Navitas Semiconductor (Nasdaq: NVTS)announced the acquisition of GeneSiC Semiconductor.

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John D.

Excellent product quality and fast shipping service. Will definitely purchase again!

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Sarah M.

Smooth transaction process and responsive customer support. Highly recommended!

Satisfied

Mike R.

Accurate product description and arrived earlier than expected.

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