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GeneSiC Semiconductor GA20JT12-263
TRANS SJT 1200V 45A D2PAK
Manufacturer # :GA20JT12-263
Manufacturer :GeneSiC Semiconductor
Dasenic # :GA20JT12-263-DS
Datasheet :
GA20JT12-263 Datasheet
GA20JT12-263 DatasheetCustomer # :
Description : TRANS SJT 1200V 45A D2PAK
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 10+ | $ 176.1120 | $ 1761.12 |
| 313+ | $ 146.7600 | $ 45935.88 |
| 625+ | $ 75.0800 | $ 46925 |
| 938+ | $ 51.0800 | $ 47913.04 |
| 1250+ | $ 50.0600 | $ 62575 |
In Stock: 1962
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 176.112
Total :$ 176.11
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GA20JT12-263 information
GeneSiC Semiconductor GA20JT12-263 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:175°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
- Technology:SiC (Silicon Carbide Junction Transistor)
- Supplier Device Package:TO-263-7
- Power Dissipation ( Max):282W (Tc)
- F E T Type:-
- F E T Feature:-
- Drain to Source Voltage ( Vdss):1200 V
- Current - Continuous Drain ( Id) @ 25° C:45A (Tc)
- Rds On ( Max) @ Id, Vgs:60mOhm @ 20A
- Vgs(th) ( Max) @ Id:-
- Gate Charge ( Qg) ( Max) @ Vgs:-
- Input Capacitance ( Ciss) ( Max) @ Vds:3091 pF @ 800 V
- Drive Voltage ( Max Rds On, Min Rds On):-
- Vgs ( Max):-
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
GA20JT12-263 provided by GeneSiC Semiconductor
GeneSiC Semiconductor is a pioneer and world-leader in silicon carbide (SiC) technology. Leading global manufacturers depend on GeneSiC’s technology to elevate the performance and efficiency of their products. GeneSiC’s electronic components run cooler, faster, and more economically and play a key role in conserving energy in a wide array of high-power systems. GeneSiC holds leading patents on wide band-gap power device technologies, a market that is projected to reach more than $5 billion by 2025. Our core strengths of design, process and technology add more value to our customers’ end-product, with performance and cost metrics setting new standards in the silicon carbide industry.
In August 2022,Navitas Semiconductor (Nasdaq: NVTS)announced the acquisition of GeneSiC Semiconductor.
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