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GeneSiC Semiconductor GA040TH65-227SP

Name: GA040TH65-227SP
Brand: GeneSiC Semiconductor
SKU: GA040TH65-227SP-DS
Price: 3000.0000 USD
Availability: InStock
Rating: 4.8 (42 reviews)

In Stock: 2186

MOQ: 1

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Mfr.Part # :GA040TH65-227SP
Manufacturer :GeneSiC Semiconductor
Dasenic # :GA040TH65-227SP-DS
Datasheet : GA040TH65-227SP Datasheet PDF
Description : MOD THYRISTOR CUSTOM SOT227
Package :-
Unit Price: $3000.0000
Total: $3000.00

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GeneSiC Semiconductor GA040TH65-227SP technical specifications, attributes, parameters.

Category:Discrete Semiconductor Devices/Thyristors - SCRs - Modules

Product Status:Active

Operating Temperature:-55°C ~ 150°C (TJ)

Mounting Type:Chassis Mount

Package / Case:Module

Structure:Single

Current - Hold ( Ih) ( Max):780 mA

Voltage - Off State:6.5 kV

Number of S C Rs, Diodes:1 SCR

Current - On State ( It ( A V)) ( Max):40 A

Current - On State ( It ( R M S)) ( Max):69 A

Voltage - Gate Trigger ( Vgt) ( Max):-

Current - Gate Trigger ( Igt) ( Max):30 mA

Current - Non Rep. Surge 50, 60 Hz ( Itsm):-

EU RoHS Status:RoHS Compliant

REACH Status:REACH is not affected

US ECCN:EAR99

China RoHS Status:Green Symbol: Green and environmentally friendly product

GA040TH65-227SP provided by GeneSiC Semiconductor

GeneSiC Semiconductor is a pioneer and world-leader in silicon carbide (SiC) technology. Leading global manufacturers depend on GeneSiC’s technology to elevate the performance and efficiency of their products. GeneSiC’s electronic components run cooler, faster, and more economically and play a key role in conserving energy in a wide array of high-power systems. GeneSiC holds leading patents on wide band-gap power device technologies, a market that is projected to reach more than $5 billion by 2025. Our core strengths of design, process and technology add more value to our customers’ end-product, with performance and cost metrics setting new standards in the silicon carbide industry. In August 2022,Navitas Semiconductor (Nasdaq: NVTS)announced the acquisition of GeneSiC Semiconductor.