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GeneSiC Semiconductor GA01PNS80-220
RF DIODE PIN 8000V
Manufacturer # :GA01PNS80-220
Manufacturer :GeneSiC Semiconductor
Dasenic # :GA01PNS80-220-DS
Datasheet :
GA01PNS80-220 Datasheet
GA01PNS80-220 DatasheetCustomer # :
Description : RF DIODE PIN 8000V
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| Quantity | Unit Price | Total |
| 10+ | $ 585.9340 | $ 5859.34 |
In Stock: 2515
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 585.934
Total :$ 585.93
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GA01PNS80-220 information
GeneSiC Semiconductor GA01PNS80-220 technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Diodes - RF
- Product Status:Active
- Operating Temperature:-55°C ~ 175°C (TJ)
- Package / Case:Axial
- Supplier Device Package:-
- Current - Max:2 A
- Diode Type:PIN - Single
- Voltage - Peak Reverse ( Max):8000V
- Capacitance @ Vr, F:4pF @ 1000V, 1MHz
- Resistance @ If, F:-
- Power Dissipation ( Max):-
- EU RoHS Status:RoHS Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.10.0080
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
GA01PNS80-220 provided by GeneSiC Semiconductor
GeneSiC Semiconductor is a pioneer and world-leader in silicon carbide (SiC) technology. Leading global manufacturers depend on GeneSiC’s technology to elevate the performance and efficiency of their products. GeneSiC’s electronic components run cooler, faster, and more economically and play a key role in conserving energy in a wide array of high-power systems. GeneSiC holds leading patents on wide band-gap power device technologies, a market that is projected to reach more than $5 billion by 2025. Our core strengths of design, process and technology add more value to our customers’ end-product, with performance and cost metrics setting new standards in the silicon carbide industry.
In August 2022,Navitas Semiconductor (Nasdaq: NVTS)announced the acquisition of GeneSiC Semiconductor.
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