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GeneSiC Semiconductor G3R75MT12D
SIC MOSFET N-CH 41A TO247-3
Manufacturer # :G3R75MT12D
Manufacturer :GeneSiC Semiconductor
Dasenic # :G3R75MT12D-DS
Datasheet :
G3R75MT12D Datasheet
G3R75MT12D DatasheetCustomer # :
Description : SIC MOSFET N-CH 41A TO247-3
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 30+ | $ 7.6374 | $ 229.12 |
| 120+ | $ 7.2513 | $ 870.16 |
| 270+ | $ 6.9948 | $ 1888.6 |
| 510+ | $ 6.6816 | $ 3407.62 |
In Stock: 8085
MOQ :1 PCS
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Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
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Unit Price :$ 7.6374
Total :$ 7.64
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G3R75MT12D information
GeneSiC Semiconductor G3R75MT12D technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-247-3
- Technology:SiCFET (Silicon Carbide)
- Supplier Device Package:TO-247-3
- Power Dissipation ( Max):207W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):1200 V
- Current - Continuous Drain ( Id) @ 25° C:41A (Tc)
- Rds On ( Max) @ Id, Vgs:90mOhm @ 20A, 15V
- Vgs(th) ( Max) @ Id:2.69V @ 7.5mA
- Gate Charge ( Qg) ( Max) @ Vgs:54 nC @ 15 V
- Input Capacitance ( Ciss) ( Max) @ Vds:1560 pF @ 800 V
- Drive Voltage ( Max Rds On, Min Rds On):15V
- Vgs ( Max):±15V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
G3R75MT12D provided by GeneSiC Semiconductor
GeneSiC Semiconductor is a pioneer and world-leader in silicon carbide (SiC) technology. Leading global manufacturers depend on GeneSiC’s technology to elevate the performance and efficiency of their products. GeneSiC’s electronic components run cooler, faster, and more economically and play a key role in conserving energy in a wide array of high-power systems. GeneSiC holds leading patents on wide band-gap power device technologies, a market that is projected to reach more than $5 billion by 2025. Our core strengths of design, process and technology add more value to our customers’ end-product, with performance and cost metrics setting new standards in the silicon carbide industry.
In August 2022,Navitas Semiconductor (Nasdaq: NVTS)announced the acquisition of GeneSiC Semiconductor.
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