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GeneSiC Semiconductor G3R75MT12D
SIC MOSFET N-CH 41A TO247-3
Manufacturer # :G3R75MT12D
Manufacturer :GeneSiC Semiconductor
Dasenic # :G3R75MT12D-DS
Datasheet :
G3R75MT12D Datasheet
G3R75MT12D DatasheetCustomer # :
Description : SIC MOSFET N-CH 41A TO247-3
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 9.3825 | $ 9.38 |
| 10+ | $ 8.0442 | $ 80.44 |
| 25+ | $ 7.6374 | $ 190.94 |
| 100+ | $ 7.1028 | $ 710.28 |
| 250+ | $ 6.9327 | $ 1733.18 |
In Stock: 8250
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 9.3825
Total :$ 9.38
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G3R75MT12D information
GeneSiC Semiconductor G3R75MT12D technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-247-3
- Technology:SiCFET (Silicon Carbide)
- Supplier Device Package:TO-247-3
- Power Dissipation ( Max):207W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):1200 V
- Current - Continuous Drain ( Id) @ 25° C:41A (Tc)
- Rds On ( Max) @ Id, Vgs:90mOhm @ 20A, 15V
- Vgs(th) ( Max) @ Id:2.69V @ 7.5mA
- Gate Charge ( Qg) ( Max) @ Vgs:54 nC @ 15 V
- Input Capacitance ( Ciss) ( Max) @ Vds:1560 pF @ 800 V
- Drive Voltage ( Max Rds On, Min Rds On):15V
- Vgs ( Max):±15V
- EU RoHS Status:RoHS Compliant
- REACH Status:REACH is not affected
- US ECCN:EAR99
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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