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GeneSiC Semiconductor G3R45MT17K
SIC MOSFET N-CH 61A TO247-4
Manufacturer # :G3R45MT17K
Manufacturer :GeneSiC Semiconductor
Dasenic # :G3R45MT17K-DS
Datasheet :
G3R45MT17K Datasheet
G3R45MT17K DatasheetCustomer # :
Description : SIC MOSFET N-CH 61A TO247-4
Pricing (USD) : *To apply for a price, please click the Send Target Price button
| Quantity | Unit Price | Total |
| 1+ | $ 29.6010 | $ 29.6 |
| 10+ | $ 26.2980 | $ 262.98 |
| 30+ | $ 24.9840 | $ 749.52 |
| 120+ | $ 23.4360 | $ 2812.32 |
| 270+ | $ 23.1930 | $ 6262.11 |
In Stock: 5124
MOQ :1 PCS
Packaging :-
Delivery Time :Ship Within 48 Hours
Shipping Origin :Shenzhen or Hong Kong Warehouse
Quantity :
Unit Price :$ 29.601
Total :$ 29.60
Delivery :
Payment :
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G3R45MT17K information
GeneSiC Semiconductor G3R45MT17K technical specifications, attributes, parameters.
- Category:Discrete Semiconductor Devices/Transistors - FETs, MOSFETs - Single
- Product Status:Active
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-247-4
- Technology:SiCFET (Silicon Carbide)
- Supplier Device Package:TO-247-4
- Power Dissipation ( Max):438W (Tc)
- F E T Type:N-Channel
- F E T Feature:-
- Drain to Source Voltage ( Vdss):1700 V
- Current - Continuous Drain ( Id) @ 25° C:61A (Tc)
- Rds On ( Max) @ Id, Vgs:58mOhm @ 40A, 15V
- Vgs(th) ( Max) @ Id:2.7V @ 8mA
- Gate Charge ( Qg) ( Max) @ Vgs:182 nC @ 15 V
- Input Capacitance ( Ciss) ( Max) @ Vds:4523 pF @ 1000 V
- Drive Voltage ( Max Rds On, Min Rds On):15V
- Vgs ( Max):±15V
- EU RoHS Status:RoHS Compliant
- MSL Rating:1 (Unlimited, 30°C/85%RH)
- US ECCN:EAR99
- HTS US:8541.29.0095
- REACH Status:REACH is not affected
- China RoHS Status:Green Symbol: Green and environmentally friendly product
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